Annealing effects on the structural, electrical and optical properties of ZnO thin films prepared by thermal evaporation technique

Zaier, A.; Meftah, A.; Jaber, A.; Abdelaziz, Ayman A.; Aida, M.S.

doi:10.1016/j.jksus.2015.04.007

Cited by 66 publications

(33 citation statements)

References 28 publications

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“…These two ZnO thin film samples showed an optical transmittance value of approximately 83% in the wavelength range of 300-800 nm. This result is in the common level (75%-90%) of the optical transmittance for ZnO thin films [34,35]. Meanwhile, in the wavelength range of 300-370 nm, the as-received ZnO thin film on the quartz glass substrate exhibited a transmission of about 20%, which was much lower than that on the sapphire (001) substrate (approximately 60%).…”

Section: Resultsmentioning

confidence: 70%

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Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

et al. 2019

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In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

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Section: Resultsmentioning

confidence: 70%

“…More clearly, the NBE is the recombination of free excitons through an exciton-exciton collision progress. There is a blue shift in the UV peak According to a previous report, for the ZnO thin films, the optical band gap, E g , can be calculated by means of the following equation [25,35]:…”

Section: Resultsmentioning

confidence: 99%

Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

et al. 2019

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“…Many methods have been described in the literature for the production of ZnO thin films such as sputtering [7,8], thermal evaporation [9], and spray pyrolysis [10] were applied for the production of ZnO. Spray pyrolysis technique is preferred among these techniques since it is cheaper, simpler and more versatile than the others, which allows the possibility of obtaining films with the required properties for different applications as well as large area films.…”

Section: Introductionmentioning

confidence: 99%

Structural, morphological, optical and opto-thermal properties of Ni-doped ZnO thin films using spray pyrolysis chemical technique

et al. 2016

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Nickel-doped zinc oxide thin films (ZnO : Ni) at different percentages were deposited on glass substrates using a chemical spray technique. The effect of Ni concentration on the structural, morphological, optical and photoluminescence (PL) properties of the ZnO : Ni thin films were investigated. X-ray diffraction analysis revealed that all films consist of single phase ZnO and was well crystallized in würtzite phase with the crystallites preferentially oriented towards the (002) direction parallel to the c-axis. The optical transmittance measurement was found to be higher than 90%, the optical band gap values of ZnO thin films decreased after doping from 3.29 to 3.21 eV. A noticeable change in optical constants was observed between undoped and Ni-doped ZnO. Room-temperature PL is observed for ZnO, and Ni-doped ZnO thin films.

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“…For this reason, in this study, it is aimed to obtain Zn rich films with low oxygen content during evaporation of ZnO particles and then to produce ZnO films by annealing. Furthermore, in thin film systems the morphology of the films strongly depends on thickness and temperature [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. Therefore, the structural, electrical, and optical properties of the ZnO/glass thin film systems obtained in this study were investigated in depth.…”

Section: Introductionmentioning

confidence: 95%

“…Adjusting the electrical, optical, and structural properties of ZnO material makes this material very advantageous for the desired applications and makes it important for material science. ZnO at room temperature has 3.37 eV band gap and 60 meV exciton binding energy [4][5][6][7][8][9][10]. Because of its superior electrical/optical properties, ZnO can be used in many applications such as LEDs, laser diodes, gas sensors, and photodetectors [11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Thickness and Temperature Dependence of ZnO/Glass Thin Film Systems Obtained by Thermal Evaporation

Kinal

Utlu

2019

Acta Phys. Pol. A

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In this study, the effects of annealing temperature and thickness on zinc oxide formation in ZnO/glass thin film systems were investigated. For this purpose, ZnO thin films with thicknesses of 150-300 nm were obtained by thermal evaporation and then annealed in a range of 200-400 • C in air. The structural, optical, and electrical characterizations of ZnO/glass films were obtained. According to structural investigations, the deposited films contain Zn rich phases due to low oxygen content. By increasing the annealing temperature, the X-ray diffraction intensity of the Zn peaks that belongs to Zn rich phases is decreased and the ZnO phases were starting to form by oxidation at 300 • C. After 300 • C, polycrystalline ZnO phases are formed in all samples and at 400 • C, ZnO films become completely transparent. Scanning electron microscopy and atomic force microscopy analysis show that nanorods are formed on the surface of the ZnO films. It appears that these nanorods exhibit a random distribution and after annealing, columnar ZnO nanostructure growths occur more regularly. The electrical sheet resistances and resistivity analyses indicate that there is a transition from conductive Zn rich phases to semiconductor ZnO phases. This dramatic resistance increase is due to the transition from dark brown Zn rich phases to transparent ZnO phases. Moreover, the optical transmittance increases to up to 85% after annealing. Optical band gap values are calculated as 3.11-3.41 eV from UV-vis transmistance analysis.

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Annealing effects on the structural, electrical and optical properties of ZnO thin films prepared by thermal evaporation technique

Cited by 66 publications

References 28 publications

Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

Structural, morphological, optical and opto-thermal properties of Ni-doped ZnO thin films using spray pyrolysis chemical technique

Thickness and Temperature Dependence of ZnO/Glass Thin Film Systems Obtained by Thermal Evaporation

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