Quantum transport
phenomenon such as quantum Hall effect usually
appears up at cryogenic temperature. Here, we observe a room-temperature
quantum transport phenomenon in ZnO-based two-dimensional systems.
We successfully fabricate Zn1–x
Mg
x
O/ZnO heterostructures by using magnetron
sputtering with a low growth temperature which makes it feasible to
obtain flexible heterostructures. Electrical transport properties
of these heterostructures are studied. A parabolic negative magnetoresistance
is clearly observed in a wide temperature range, which can be accurately
described by the weak localization theory. By analyzing the temperature
dependence of the dephasing length, it is found that the electron–electron
scattering combined with two-dimensional electron–phonon scattering
dominates the dephasing process for electrons. Importantly, the observed
negative magnetoresistance persists up to 300 K. This indicates that
room-temperature weak localization effect appears up, which can be
attributed to weak electron–phonon scattering and small electron
mobility. The present work provides a reference for realizing room-temperature
quantum effect which is beneficial to develop quantum-interference
devices.