Anti-phase direct bonding and its application to the fabrication of InP-based 1.55 μm wavelength lasers on GaAs substrates

Abstract

We propose anti-phase direct bonding and report on the first demonstration of its application to device fabrication. Cross-sectional observation by high-resolution transmission electron microscope showed that InP and GaAs wafers bonded at the atomic level and the misfit dislocations were localized at the bonding interface. Then InP-based 1.55 μm wavelength lasers were fabricated on GaAs. The performance of the lasers was approximately equal to that of the lasers formed by in-phase direct bonding. Moreover, stable operation was possible for more than 1000 h at 50 °C.

Applicability range of Stoney’s formula and modified formulas for a film/substrate bilayer

“…For example, the formation of an amorphous layer and dangling bonds in some regions between the two crystals results in the weakly bonded interface areas. [21][22][23] This will reduce the overall interface adhesion. 23 For a nonideal or damaged interface, 24 the interfacial slip arises.…”

Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)

“…9 In particular, direct bonding of different materials with variously related crystallographic axes gives us extended possibilities for device integration. 10 With this as our motivation, we further investigate the possibility of using the direct bonding techniques for free-orientation integration: to freely integrate various kinds of materials with various crystallographic orientations. In this letter, we examine the direct bonding of ͑001͒ InP and ͑110͒ GaAs, of which the numbers of dangling bonds are extremely different at the bonding interface, and demonstrate the application of this bonded structure to device fabrication.…”

Electrical modeling of the GaAs/InP wafer bonded heterojunction

“…Besides, the barrier height of a defect-free interface is approximately 0.12 eV, to be compared with a 0.2 eV barrier height as evaluated from the paper of Tanabe et al [11]. On the other side, the choice of a pure thermionic emission mechanism in the work of Okuno et al leads a 0.4 eV barrier height [7]. In fact, our interface state model was included both the thermionic emission (TE) and tunneling effect (TU).…”

“…For instance, double-bonded vertical cavity laser structure (VCLs), where a quantum-well active region is sandwiched between a n-type and a p-type epitaxial mirror were designed [5,6]. In optoelectronics integrated circuits (OEICs), the direct wafer bonding technique is used to increase the performances of laser devices by localizing a high density of dislocations at the interface [7]. Moreover useful contributions are carried out in the field of solar energy with multijunction solar cells [8].…”