Applicability of coating techniques for the production of organic field effect transistors

Manuelli, Alessandro; Knobloch, A.; Bernds, A.; Clemens, W.

doi:10.1109/polytr.2002.1020212

Cited by 5 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Solution-processed organic field-effect transistors (OFETs) have received considerable attention because of their attractive features of superior intrinsic mechanical flexibility, dramatic performance improvement, and compatibility with low-cost printing processes. − These fascinating features of OFETs make them ideal candidates for applications such as flexible display backplanes, sensors, radio frequency identification tags, smart memory, and wearable electronic systems. − Over the past few decades, apart from developing high-mobility organic semiconductors, researchers have focused on developing low-cost solution-based processes for OFETs using various printing techniques (e.g., doctor-blade coating, bar coating, inkjet printing, and dip-coating). − These techniques have been optimized to yield polymer thin films with uniform and smooth morphologies and desirable crystal structures that ensure efficient charge transport in OFETs. ,− …”

Section: Introductionmentioning

confidence: 99%

Uniform and Reliable Dip-Coated Conjugated Polymers for Organic Transistors as Obtained by Solvent Vapor Annealing

Kim¹,

Kwon²,

Kim

et al. 2019

J. Phys. Chem. C

View full text Add to dashboard Cite

Dip-coating is a useful technique to prepare a thin film of an organic semiconductor; however, achieving homogeneous film properties is sometimes challenging because of the experimental configuration of dip-coating under the strong influence of solvent vapor. In this work, we studied the effect of solvent vapor on dip-coated film uniformity during the dip-coating process. We demonstrate that solvent vapor released from the solution reservoir strongly affects film crystallinity at each relative position in the vertical direction. We also propose a novel method that utilizes the inevitable solvent vapor to anneal dip-coated films by adding some residual time during the dip-coating process, which results in highly uniform and crystalline films. Field-effect transistors constructed using films prepared by this dip-coating technique show a uniform, reliable field effect. This work provides a general principle and systematic guideline to prepare highly crystalline and uniform films of organic semiconductors via dip-coating. This method substantially reduces operational complexity in the dip-coating process, enables easy operation, and thus meets the demands of being low-cost for large-area fabrication without a postprocess. We therefore expect this method to be highly meaningful for the fabrication of organic electronics as well as for the assembly of other materials via solution processes.

show abstract

Section: Introductionmentioning

confidence: 99%

Uniform and Reliable Dip-Coated Conjugated Polymers for Organic Transistors as Obtained by Solvent Vapor Annealing

Kim¹,

Kwon²,

Kim

et al. 2019

J. Phys. Chem. C

View full text Add to dashboard Cite

show abstract

“…Its potential applications include active matrix flexible displays, electronic paper (e-paper), smart cards, radio-frequency identification devices and other consumer electronics. Most attention has been paid to the soluble conjugated polymer, because it can be rapidly coated on a substrate with a large surface area by spin coating (6)(7)(8). Since P3HT is apt to be synthesized and has high carrier mobility (9)(10)(11), it is the most frequently compound used in various polymer semiconductors.…”

mentioning

confidence: 99%

Polymer Thin-Film Transistors with Chemically Modified Dielectric Interfaces by Atmospheric-Pressure Plasma Technology

2008

View full text Add to dashboard Cite

Poly-3-hexylthiophene (P3HT) is coated on a chemically modified SiO 2 gate dielectric layer as an active layer to fabricate organic thin-film transistors (OTFTs). This study uses a new atmosphericpressure plasma (APP) approach to treat SiO 2 surfaces, and investigates its effect on the electric characteristics of OTFTs. The APP process can be performed at low temperature (<100 ) and atmospheric pressure, so it is very suitable for use on a plastic substrate. After the SiO 2 surface has been modified by the APP process with hexamethyldisilazane (HMDS), it exhibits typical I-V characteristics of TFTs. Calculations reveal that its field effect mobility can reach 0.02-0.03 cm 2 /Vs, which is about 15 times higher than that before the modification, and the threshold voltage is below -10V. The performance is even better than that obtained following the usual surface treatment of the SiO 2 surface by spincoating or evaporation.There has been great interest in thin-film transistors made of organic compounds, since organic thin-film transistors (OTFTs) have many unique advantages, such as lightweight, flexibility, and low-cost fabrication (1-5). They have therefore attracted much interest over recent years. Its potential applications include active matrix flexible displays, electronic paper (e-paper), smart cards, radio-frequency identification devices and other consumer electronics. Most attention has been paid to the soluble conjugated polymer, because it can be rapidly coated on a substrate with a large surface area by spin coating (6-8). Since P3HT is apt to be synthesized and has high carrier mobility (9-11), it is the most frequently compound used in various polymer semiconductors. However, the performance of OTFTs depends strongly on the semiconductor/dielectric interface. When P3HT is coated on an SiO 2 dielectric layer, the difference between the physical and chemical properties of the organic and inorganic materials is such that a problem of incompatibility arises at their interface (12), not only leading to poor adhesion, but also influencing the structural ordering of the P3HT chain during film formation, making the performance of OTFT poor. Many approaches have been adopted to solve the interface problem, such as the use of self-assembled monolayers (SAMs) to treat SiO 2 surfaces (13)(14). SAMs are typically deposited by spin-coating or evaporation on a dielectric layer. They improve the electric properties of OTFTs after treatment.This work presents a new rapid organic APP surface treatment of an SiO 2 surface at room temperature. The APP process can generate high-density plasma in the absence of a vacuum system, and it can be used to treat the surface of various substrates at low temperature and in the ambient environment. Therefore, this study uses the APP process to deposit HMDS on the surface of SiO 2 , and analyzes the surface characteristics ECS Transactions, 11 (25) 43-49 (2008) 10.1149/1.2930792 © The Electrochemical Society 43 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use add...

show abstract

“…Potential applications include active matrix flexible displays, electronic paper (e-paper), low-end data storage such as smart cards, radio-frequency identification devices, and other consumer electronics. Soluble organic semiconductors have attracted particular interest, since these materials can be easily spun-coated to form circuits for disposable electronics on a plastic substrate (6)(7)(8). In various kinds of soluble organic semiconductors currently in use, poly-3hexylthiophene, P3HT, has become the most promising candidate for active layer of OTFTs due to its easy synthesis and relatively high mobility (~10 -2 cm 2 /Vs) (9)(10)(11).…”

mentioning

confidence: 99%

Surface-Treatment Effects on Organic Thin-Film Transistors by Atmospheric-Pressure Plasma Technology.

Chang

Lin²,

Huang³

et al. 2007

ECS Trans.

View full text Add to dashboard Cite

In this study, we have fabricated OTFTs using poly-3-hexylthiophene (P3HT) as an active layer and SiO2 as gate dielectric layer which was modified by the atmospheric-pressure plasma technology (APPT). Processes of APPT are below 120{degree sign}C and at atmospheric pressure. The effects of surface treatment of SiO2 on electric characteristics of OTFTs were investigated. After surface treatment, the field-effect transistor has a threshold voltage within -10V and a field-effect mobility of 0.02-0.03 cm2/Vs which was 15-fold improvement over the mobility on bare silicon oxide. This study suggests an interesting direction for preparation of high-performance OTFTs with high efficiency and low temperature of surface treatment process by APPT.

show abstract

Applicability of coating techniques for the production of organic field effect transistors

Cited by 5 publications

References 9 publications

Uniform and Reliable Dip-Coated Conjugated Polymers for Organic Transistors as Obtained by Solvent Vapor Annealing

Uniform and Reliable Dip-Coated Conjugated Polymers for Organic Transistors as Obtained by Solvent Vapor Annealing

Polymer Thin-Film Transistors with Chemically Modified Dielectric Interfaces by Atmospheric-Pressure Plasma Technology

Surface-Treatment Effects on Organic Thin-Film Transistors by Atmospheric-Pressure Plasma Technology.

Contact Info

Product

Resources

About