2012
DOI: 10.1063/1.4707466
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Application of double-hybrid density functionals to charge transfer in N-substituted pentacenequinones

Abstract: A set of N-heteroquinones, deriving from oligoacenes, have been recently proposed as n-type organic semiconductors with high electron mobilities in thin-film transistors. Generally speaking, this class of compounds self-assembles in neighboring π -stacks linked by weak hydrogen bonds. We aim at theoretically characterizing here the sequential charge transport (hopping) process expected to take place across these arrays of molecules. To do so, we need to accurately address the preferred packing of these materia… Show more

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Cited by 10 publications
(21 citation statements)
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“…This is not a trivial conclusion, which have contributed lately to the vivid debate in literature about half-metallicity of graphene, since a non-vanishing singlet-triplet energy gap is predicted at all other DFT levels, after the corresponding initial polarisation of spin-densities yielding antiferromagnetic systems, and only high-level CCSD(T) calculations reverse the situation indicating a vanishing singlet-triplet energy gap [172]. Another recent application for the field of materials science is the study of n-channel organic semiconductors based on N-heteroquinones [173], see Figure 7. The link to charge mobility values in the diffusive regime, where the charge carriers migrate across the molecular crystal through sequential (hopping) chargetransfer events involving a pair of neighbouring molecules, needs to access to the (sometimes unknown) dimer geometry.…”
Section: Self-interaction Errormentioning
confidence: 99%
“…This is not a trivial conclusion, which have contributed lately to the vivid debate in literature about half-metallicity of graphene, since a non-vanishing singlet-triplet energy gap is predicted at all other DFT levels, after the corresponding initial polarisation of spin-densities yielding antiferromagnetic systems, and only high-level CCSD(T) calculations reverse the situation indicating a vanishing singlet-triplet energy gap [172]. Another recent application for the field of materials science is the study of n-channel organic semiconductors based on N-heteroquinones [173], see Figure 7. The link to charge mobility values in the diffusive regime, where the charge carriers migrate across the molecular crystal through sequential (hopping) chargetransfer events involving a pair of neighbouring molecules, needs to access to the (sometimes unknown) dimer geometry.…”
Section: Self-interaction Errormentioning
confidence: 99%
“…109 When looking at corresponding rates for electron transport, we obtain a value of 3.5 × 10 13 s −1 , which also compares favourably with halogenated oligoacenes 74 although it is still an order of magnitude lower than for other materials such as some state-ofthe-art pentacenequinones. 110 Most importantly, these rates might anticipate a great behavior, because for purely diffusive quasi-1D motion, the Einstein-Smoluchowski equation reads as 30,111 …”
Section: Hole and Electron Transfer Ratesmentioning
confidence: 99%
“…IP and EA are also key parameters that determine the efficiency of the injection of charges from electrodes as well as the ease to be reduced or oxidized upon air exposure. 26 Thus, the EA of a semiconductor should amount to no less than 3.0 eV for an easy electron injection, but not much greater than 4.0 eV to avoid its stability in ambient conditions was compromised. 6 Low IPs facilitate hole injection but too low values can produce unintentional doping.…”
Section: Theoretical Considerations About Charge Injection and Transportmentioning
confidence: 99%