Abstract:Atomic Layer Deposition (ALD) is sequential and conformal process that provides precise thickness control due to its self-limiting nature even in high aspect ratio structures. The exponential growth in the use of ALD is due the availability of hundreds of precursor chemistries for diverse technological applications beyond just semiconductors and microelectronics. However, one of recurring challenges is the problem of results disparity, and errors that underline the causes of disparity, primarily may be due to … Show more
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