Applications of diamond films and related materials

Feldman, Albert

doi:10.6028/nist.sp.885

Cited by 67 publications

(5 citation statements)

References 14 publications

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“…Application of large electric fields through the planes of submicron thickness films caused irreversible increases in conductivity. No attempts were made to condition or burn in the electrode/film systems after breakdown, 13 and all measurements were made well below the approximately 10 8 V/m damage threshold. The effect of neutralization was most pronounced for insulating a-C deposited at low temperature, while conductive films deposited at high temperature were virtually unaffected by use of the neutralizer.…”

Section: A Amorphous Carbon Conductivitymentioning

confidence: 99%

Amorphous carbon films deposited from carbon ions extracted from a discharge in fullerene vapor

Maiken

Taborek

2000

Journal of Applied Physics

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Amorphous carbon ͑a-C͒ films with physical properties ranging from diamond like to graphite like were deposited at rates of 1 m/h under 10 Ϫ6 Torr vacuum by extracting a molecular carbon ion beam from a pure carbon discharge in fullerene vapor. With ion energies fixed near 300 eV, substrate temperature and beam neutralization were the main process parameters controlling film properties. a-C stress and density increased with decreasing deposition temperature, ranging to greater than 3 GPa and 2.9 g/cm 3 , respectively. Room temperature conductivity ranged from 10 to 10 Ϫ11 (⍀ cm) Ϫ1 , with cool substrates and a well neutralized ion beam producing the most insulating films. a-C conductivity increased irreversibly after imposition of electric fields exceeding 10 8 V/m through the film planes. The high conductivities of films deposited without a beam neutralizer are attributed to phase changes resulting from dielectric breakdown driven by electric fields induced by surface charging. Conductivity data obtained for films deposited at different temperatures are discussed in the context of activated conduction, variable range hopping, and multiphonon assisted hopping transport processes.

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Section: A Amorphous Carbon Conductivitymentioning

confidence: 99%

Amorphous carbon films deposited from carbon ions extracted from a discharge in fullerene vapor

Maiken

Taborek

2000

Journal of Applied Physics

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“…by a copper block acting as a heat sink or a microchannel cooler. If CVD diamond is used as heatspreader material, the thermal resistance can be reduced by 50% (Boudreaux 1995). Practically, diamond heatspreaders of 1 × 1 × 0.3 mm 3 in size for single laser diodes or 3 × 10 × 0.5 mm 3 (figure 20) for laser diode arrays are mounted between the laser diodes and the microchannel cooler.…”

Section: Diamond Heatspreadersmentioning

confidence: 99%

Growth and application of undoped and doped diamond films

Werner¹,

Locher

1998

Rep. Prog. Phys.

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Diamond is a unique material with several outstanding physical and chemical properties. It has the highest thermal conductivity at room temperature and it is transparent from the UV to the far IR. Furthermore it has the highest hardness, the highest Young's modulus and it is chemically inert and radiation hard. These and other properties of diamond are of great interest for various commercial applications. Much progress has been made in the last decade to produce diamond with chemical vapour deposition (CVD) techniques. Today, CVD diamond plates of more than 10 cm in diameter and more than 1 mm in thickness are commercially available whose properties, especially the optical and thermal ones, are comparable to the best single-crystal diamonds.In this overview, the historical development of CVD diamond deposition with the main focus on the most important techniques, hot-filament and microwave assisted CVD, will be resumed. We describe the control of structural and morphological properties during the deposition which is a prerequisite of oriented growth and the doping of diamond which is needed for semiconductor and sensor applications.The second part of this overview will discuss optical, thermal, thermomechanical and electronic properties of single-crystal diamond and CVD diamond. Finally, we give a description of several applications such as IR windows, heatspreaders, temperature sensors, piezoresistive sensors, diodes and transistors.

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“…The figure 5 also shows a broadband centered at 1580cm -1 , correlated with non-diamond content such as graphite and amorphous carbon. Non-diamond content is believed to be one of the factors that influence the adhesion of diamond coating to substrate [8]. The Co concentration at the surface of new substrate after 10-20h deposition was about 1wt% that was considered as one of reasons resulting in non-diamond content.…”

Section: Resultsmentioning

confidence: 99%

Diamond Coated on Cobalt-Deficient Gradient Tungsten Carbide

Gou

Zhu

Ran

et al. 2007

KEM

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In order to improve the adhesion between diamond coatings and cemented tungsten carbide (WC-Co) substrates, the diamond coatings were deposited on one kind of cobalt-deficient gradient WC-Co by the microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy, X-ray diffraction and Raman spectroscopy were used to characterize the diamond coatings. The results showed dense, well facet diamond coatings. The cobalt content at the surface of substrate was measured by electron probe microanalysis. It was found that Co did not largely move to the surface as usual with deposition time increasing compared with the conventional tungsten carbide; The cobalt content at the surface of substrate after deposition (about 1 wt %) was lower than before (3.42wt%), which improved diamond coating’s adhesion against the tungsten carbide substrate.

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Applications of diamond films and related materials

Cited by 67 publications

References 14 publications

Amorphous carbon films deposited from carbon ions extracted from a discharge in fullerene vapor

Amorphous carbon films deposited from carbon ions extracted from a discharge in fullerene vapor

Growth and application of undoped and doped diamond films

Diamond Coated on Cobalt-Deficient Gradient Tungsten Carbide

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