Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS Devices

Krantz, Richard; Aukerman, L. W.; Zietlow, Thomas C.

doi:10.1109/tns.1987.4337452

Cited by 85 publications

(23 citation statements)

References 23 publications

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“…The dashed line in Fig. 8 represents the net radiationinduced charge as a function of applied voltage during irradiation, calculated for a 250-nm-thick SiO layer, assuming uniform electron-hole pair generation throughout the oxide thickness and trapping at a constant fraction of generated holes for a given applied field [21]. It can be seen that the experimental curve, obtained for the SiO -Si N -SiO layer, lies substantially below the curve calculated using the above assumptions.…”

Section: Discussionmentioning

confidence: 88%

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

Barchuk¹,

Kilchitskaya

Lysenko

et al. 1997

IEEE Trans. Nucl. Sci.

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In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMRtechnique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique.

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Section: Discussionmentioning

confidence: 88%

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

Barchuk¹,

Kilchitskaya

Lysenko

et al. 1997

IEEE Trans. Nucl. Sci.

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“…They used a field dependent factor of , which gave a slightly better fit to their results; the value of the exponent was based on an earlier paper by Krantz, et al [22]. The composite yield curve from their work, where data at low fields has been adjusted to account for field-dependent recombination, is shown in Fig.…”

Section: B Older Results At Room Temperaturementioning

confidence: 99%

Field Dependence of Charge Yield in Silicon Dioxide

Johnston¹,

Swimm²,

Thorbourn

et al. 2014

IEEE Trans. Nucl. Sci.

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New experimental results for the yield of electron-hole pairs in at low temperature are inconsistent with the Onsager theory of recombination. A revised model is developed to account for this, taking boundary conditions into effect. The model predicts a strong thickness dependence for yield under low-field conditions that is important at lower temperatures. New definitions for charge yield are proposed that distinguish between the initial escape probability and the net yield after charge transport, along with revised interpretations of older work on charge yield.

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“…Ре-шения (сплошные линии 1 [29] и значениях полных концентраций исходных ловушек, указанных в таблице.…”

Section: расчеты по модели и их обсуждениеunclassified

Модель накопления зарядов в n- и p-МОП-транзисторах при туннельной инжекции электронов из затвора

Александров¹,

Мокрушина²

2018

Физика И Техника Полупроводников

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A quantitative model for charge accumulation in an undergate dielectric during tunneling electron injection from a gate according to the Fowler–Nordheim mechanism is developed. The model takes into account electron and hole capture at hydrogen-free and hydrogen-related traps as well as the generation of surface states during the interaction of holes with hydrogen-related centers. The experimental dependences of the threshold voltage shift and gate voltage shift of n - and p -channel MOS (metal–oxide–semiconductor) transistors on the injected charge in the constant current mode are analyzed based on the model.

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Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS Devices

Cited by 85 publications

References 23 publications

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

Field Dependence of Charge Yield in Silicon Dioxide

Модель накопления зарядов в n- и p-МОП-транзисторах при туннельной инжекции электронов из затвора

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