Aqueous zinc ammine complex for solution-processed ZnO semiconductors in thin film transistors

Park, Si Yun; Kim, Sun‐Young; Yoo, Jeeyoung; Lim, Keon Hee; Lee, Eungkyu; Kim, Kyongjun; Kim, Joohee; Kim, Youn Sang

doi:10.1039/c3ra47437b

Cited by 32 publications

(22 citation statements)

References 24 publications

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“…The effects of the FLA process at various laser radiation times on the In2O3 TFTs were investigated by measuring the stoichiometry of the In2O3 films by XPS. Figure 5(a-d [51,52] The formation of M-O lattices plays a vital role in improving the carrier transport. The FLA process at 30 s could form more M-O lattices and then improve the µsat value to 10.03 ± 0.64 cm 2 /Vs, which is consistent with Table 1.…”

Section: Resultsmentioning

confidence: 99%

Improved High-Performance Solution Processed In₂O₃ Thin Film Transistor Fabricated by Femtosecond Laser Pre-Annealing Process

et al. 2021

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The low-temperature annealing process has a critical impact on the electrical performance of thin-film transistors (TFTs). This paper reports significant performance enhancements of TFTs using a femtosecond laser pre-annealing (FLA)-based preparation method. The solution-processed In2O3 films were fabricated by FLA at various laser irradiation times and then annealed on a hot-plate at 230 ℃. When the FLA time was set to 30 s, the device exhibited high saturation mobility of 10.03 ± 0.64 cm 2 /Vs, Ion/Ioff of 3.4 × 10 5 , low VTH of 0.14 ± 0.64 V, and small SS of 1.44 ± 0.37 V/dec. The FLA process improved the formation of M-O lattices effectively, which led to an improvement in mobility. Furthermore, the gate-bias-stress stability and time-dependent environmental stability were improved considerably by the FLA process. These results show that high-performance In2O3 TFTs can be prepared at low temperatures using FLA-centered annealing technology. This work suggests that the FLA preparation method has tremendous potential for the fabrication of low-cost, high performance, and flexible TFT devices.INDEX TERMS In2O3, thin-film transistors, solution process, femtosecond laser, low-temperature, annealing process.

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Section: Resultsmentioning

confidence: 99%

Improved High-Performance Solution Processed In₂O₃ Thin Film Transistor Fabricated by Femtosecond Laser Pre-Annealing Process

et al. 2021

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“…Raman spectra from 100 to 700 cm -1 were obtained at room temperature (RT) on a T64000 System (Horiba) using as excitation source the 514. 53…”

Section: Spectroscopic Characterization Techniquesmentioning

confidence: 99%

Room temperature sintering of polar ZnO nanosheets: II-mechanism

Fernández-Pérez

Rodríguez-Casado

Valdés-Solı́s

et al. 2017

Phys. Chem. Chem. Phys.

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In a previous work by the authors (A. Fernández-Pérez el al., Room temperature sintering of polar ZnO nanosheets: I-evidence, 2017, DOI: 10.1039/C7CP02306E), polar ZnO nanosheets were stored at room temperature under different atmospheres and the evolution of their textural and crystal properties during storage was followed. It was found that the specific surface area of the nanosheets drastically decreased during storage, with a loss of up to 75%. The ZnO crystals increased in size mainly through the partial merging of their polar surfaces at the expense of narrow mesoporosity, in a process triggered by the action of moisture, oxygen and, in their absence, by light. In the present work, a set of spectroscopic techniques (FTIR, Raman and XPS) has been used in an attempt to unravel the mechanism behind this spontaneous sintering process. The mechanism starts with the molecular adsorption of water, which takes place on Zn atoms close to oxygen vacancies on the (100) surface, where HO dissociates to form two hydroxyl groups and to heal one oxygen vacancy. This process triggers the room temperature migration of Zn interstitials towards the outer surface of the polar region. What were previously interstitial Zn atoms now gradually occupy the mesopores, with interstitial oxygen being used to build up the O sublattice until total occupancy of the narrow mesoporosity is achieved.

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“…The main peak at 528.95 eV corresponds to the ions in the ZnO crystal lattice (O A ) while the peak at 530.98 eV can be related to oxygen vacancies in the crystal lattices (O B ). The peak at 532.61 eV can be ascribed to oxygen adsorbed on the ZnO surface mainly in the form of hydroxide (–OH), but also as –CO 3 , H 2 O, and O 2 − species [ 53 , 54 ].…”

Section: Resultsmentioning

confidence: 99%

Sensitive and Selective NH3 Monitoring at Room Temperature Using ZnO Ceramic Nanofibers Decorated with Poly(styrene sulfonate)

André

Kwak

Dong

et al. 2018

Sensors

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Ammonia (NH3) gas is a prominent air pollutant that is frequently found in industrial and livestock production environments. Due to the importance in controlling pollution and protecting public health, the development of new platforms for sensing NH3 at room temperature has attracted great attention. In this study, a sensitive NH3 gas device with enhanced selectivity is developed based on zinc oxide nanofibers (ZnO NFs) decorated with poly(styrene sulfonate) (PSS) and operated at room temperature. ZnO NFs were prepared by electrospinning followed by calcination at 500 °C for 3 h. The electrospun ZnO NFs are characterized to evaluate the properties of the as-prepared sensing materials. The loading of PSS to prepare ZnO NFs/PSS composite is also optimized based on the best sensing performance. Under the optimal composition, ZnO NFs/PSS displays rapid, reversible, and sensitive response upon NH3 exposure at room temperature. The device shows a dynamic linear range up to 100 ppm and a limit of detection of 3.22 ppm and enhanced selectivity toward NH3 in synthetic air, against NO2 and CO, compared to pure ZnO NFs. Additionally, a sensing mechanism is proposed to illustrate the sensing performance using ZnO NFs/PSS composite. Therefore, this study provides a simple methodology to design a sensitive platform for NH3 monitoring at room temperature.

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Aqueous zinc ammine complex for solution-processed ZnO semiconductors in thin film transistors

Cited by 32 publications

References 24 publications

Improved High-Performance Solution Processed In₂O₃ Thin Film Transistor Fabricated by Femtosecond Laser Pre-Annealing Process

Improved High-Performance Solution Processed In₂O₃ Thin Film Transistor Fabricated by Femtosecond Laser Pre-Annealing Process

Room temperature sintering of polar ZnO nanosheets: II-mechanism

Sensitive and Selective NH3 Monitoring at Room Temperature Using ZnO Ceramic Nanofibers Decorated with Poly(styrene sulfonate)

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