Architecture Design and Interface Engineering of Self-assembly VS4/rGO Heterostructures for Ultrathin Absorbent

Abstract

The employment of microwave absorbents is highly desirable to address the increasing threats of electromagnetic pollution. Importantly, developing ultrathin absorbent is acknowledged as a linchpin in the design of lightweight and flexible electronic devices, but there are remaining unprecedented challenges. Herein, the self-assembly VS4/rGO heterostructure is constructed to be engineered as ultrathin microwave absorbent through the strategies of architecture design and interface engineering. The microarchitecture and heterointerface of VS4/rGO heterostructure can be regulated by the generation of VS4 nanorods anchored on rGO, which can effectively modulate the impedance matching and attenuation constant. The maximum reflection loss of 2VS4/rGO40 heterostructure can reach − 43.5 dB at 14 GHz with the impedance matching and attenuation constant approaching 0.98 and 187, respectively. The effective absorption bandwidth of 4.8 GHz can be achieved with an ultrathin thickness of 1.4 mm. The far-reaching comprehension of the heterointerface on microwave absorption performance is explicitly unveiled by experimental results and theoretical calculations. Microarchitecture and heterointerface synergistically inspire multi-dimensional advantages to enhance dipole polarization, interfacial polarization, and multiple reflections and scatterings of microwaves. Overall, the strategies of architecture design and interface engineering pave the way for achieving ultrathin and enhanced microwave absorption materials.

Experimental and Theoretical Indagation of Binder-Free N-Graphene Coupling Vanadium Tetrasulfide Aerogel Cathode for Promoting Aqueous Zn-Ion Storage

“…The two peaks located at 521.3 and 513.7 eV are indexed to 2p 1/2 and 2p 3/2 of the V–C bonds, respectively . For the S 2p spectrum (Figure g), the two peaks situated at 164.0 and 162.8 eV are associated with 2p 1/2 and 2p 3/2 of S 2 2– , respectively . The split separation for S 2p is a little bit larger than the theoretical value, which is caused by the generation of unsaturated coordination S induced by the bonding of V and C or sulfur vacancies .…”

“…33 For the S 2p spectrum (Figure 2g), the two peaks situated at 164.0 and 162.8 eV are associated with 2p 1/2 and 2p 3/2 of S 2 2− , respectively. 34 The split separation for S 2p is a little bit larger than the theoretical value, which is caused by the generation of unsaturated coordination S induced by the bonding of V and C or sulfur vacancies. 35 The C 1s spectrum in Figure 2h 36 The C−N bond configuration corresponds to the pyridine-N or graphite-N, indicating that N was doped successfully with C in the NGA structure.…”

Achieving Ultra-Wideband and Elevated Temperature Electromagnetic Wave Absorption via Constructing Lightweight Porous Rigid Structure

“…The protrusion of the imaginary part of the dielectric curve indicates the existence of multiple polarization relaxation processes. With the increase in the amount of CF, the heterogeneous interface between the carbon fiber and the PMI foam increases, which shows the increase in the imaginary part of the dielectric [ 53 , 54 ]. In Fig.…”

An All-In-One Multifunctional Touch Sensor with Carbon-Based Gradient Resistance Elements

“…Minimalistic touch sensor design with a smaller number of electrodes will be benefit with lower signal crosstalk and faster signal detection, higher stability and lower system configuration requirements for human–machine interactive systems. Carbon-based materials have a wide range of application prospects as advanced materials [ 31 – 33 ], which can be served as the functional sensitive materials of touch sensors.…”