Atomic and Electronic Structure of a Multidomain GeTe Crystal

Frolov, Alexander S.; Sánchez-Barriga, J.; Callaert, Carolien; Hadermann, Joke; Fedorov, Alexander; Usachov, Dmitry Yu.; Чайка, А. Н.; Walls, Brian; Zhussupbekov, Kuanysh; Shvets, I. V.; Muntwiler, Matthias; Amati, Matteo; Gregoratti, Luca; Varykhalov, A.; Rader, O.; Yashina, Lada V.

doi:10.1021/acsnano.0c05851

Cited by 18 publications

(23 citation statements)

References 68 publications

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“…We obtained the surface Rashba band for a wide range of k z dimensions through experimental ARPES measurements with linearly polarized light. The dispersion of the Rashba band was well matched with previous reports, which used the epitaxially grown GeTe films [20,22] and single-crystalline sample [33]. We used in situ potassium dosing (K dosing) to systematically control the binding energy and splitting energy of the surface Rashba state and observed a decrease in the Rashba splitting after K dosing.…”

Section: Introductionsupporting

confidence: 81%

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Chemical control of the Rashba spin splitting size of α -GeTe(111) surface states by adjusting the potential at the topmost atomic layer

et al. 2021

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As control of the Rashba spin splitting size is highly desirable for spintronic devices, intensive studies have been performed to vary the splitting size by, for example, applying an electric field or designing novel heterostructures. However, direct observation of Rashba spin splitting size change via spectroscopic measurements has not been done so far. Here, we report results of angle-resolved photoemission studies on ferroelectric α-GeTe(111). We observe that the Rashba splitting size of α-GeTe(111) surface states is reduced upon dosing with potassium (K) which has a very low electron affinity. Based on density functional theory calculations, we find that the electric potential energy at the topmost atomic layer and the surface potential energy barrier is reduced upon K dosing. This change in the surface potential induces both delocalization of the surface states and reduction of the splitting size. We expect to increase the splitting size by dosing other elements or molecules with high electron affinity.

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Section: Introductionsupporting

confidence: 81%

“…The bands located at k y = 0.31 and 0.2 Å −1 correspond to the outer and inner branch of the SS1, respectively. Because of its 2D nature, SS1 and SR show negligible dispersion along the k z [23,33].…”

Section: Discussionmentioning

confidence: 99%

Chemical control of the Rashba spin splitting size of α -GeTe(111) surface states by adjusting the potential at the topmost atomic layer

et al. 2021

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“…During ex-situ transfer to ultrahigh vacuum (UHV) the sample was mounted on an STM puck. We performed a detailed STM investigation to study the atomic structure of the polycrystalline PtTe 2 film, similar to previous studies focused on other materials 29,42 . The 1 T atomic structure of PtTe 2 is schematically represented in Fig.…”

Section: Stm Characterization Of Point Defectsmentioning

confidence: 99%

Imaging and identification of point defects in PtTe2

et al. 2021

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The properties and performance of two-dimensional (2D) materials can be greatly affected by point defects. PtTe2, a 2D material that belongs to the group 10 transition metal dichalcogenides, is a type-II Dirac semimetal, which has gained a lot of attention recently due to its potential for applications in catalysis, photonics, and spintronics. Here, we provide an experimental and theoretical investigation of point defects on and near the surface of PtTe2. Using scanning tunneling microscopy and scanning tunneling spectroscopy (STS) measurements, in combination with first-principle calculations, we identify and characterize five common surface and subsurface point defects. The influence of these defects on the electronic structure of PtTe2 is explored in detail through grid STS measurements and complementary density functional theory calculations. We believe these findings will be of significance to future efforts to engineer point defects in PtTe2, which is an interesting and enticing approach to tune the charge-carrier mobility and electron–hole recombination rates, as well as the site reactivity for catalysis.

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“…Moreover, recent reports have indicated that damage by the TEM electron beam can be a problematic issue for TMDs. [37][38][39] On the other hand, scanning tunnelling microscopy and spectroscopy (STM/STS) are non-destructive techniques, which can be used to map morphology and probe the electronic structure of samples [40][41][42][43] and, provided a conductive pathway can be established through the sample, do not require a transfer process.…”

Section: Introductionmentioning

confidence: 99%

Electronic and structural characterisation of polycrystalline platinum disulfide thin films

et al. 2020

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Atomic and Electronic Structure of a Multidomain GeTe Crystal

Abstract: Renewed interestRashba semiconductors in non-volatile spintronic devices with advanced memory and computing capabilities at the nanoscale.

Cited by 18 publications

References 68 publications

Chemical control of the Rashba spin splitting size of α -GeTe(111) surface states by adjusting the potential at the topmost atomic layer

Chemical control of the Rashba spin splitting size of α -GeTe(111) surface states by adjusting the potential at the topmost atomic layer

Imaging and identification of point defects in PtTe2

Electronic and structural characterisation of polycrystalline platinum disulfide thin films

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