2021
DOI: 10.1016/j.ccr.2020.213734
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Atomic layer deposition (ALD) assisting the visibility of metal-organic frameworks (MOFs) technologies

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Cited by 23 publications
(12 citation statements)
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“…Looking to expand the number of available Sn( ii ) alkoxide precursors for subsequent OR/H metathesis ( en route to bulk Sn metal), we targeted the preparation of ImMe 2 ·Sn(O t Bu) 2 ; added motivation for using the small carbene ImMe 2 stems from possible enhanced volatility of the final adduct for future studies involving atomic layer deposition (ALD). 13 Following established literature procedures, 8 b ,14 the free carbene ImMe 2 was generated in situ and combined with tin( ii ) dichloride in a THF solution to produce ImMe 2 ·SnCl 2 ( 2 ) (Scheme 2). Crystals of 2 were obtained from a concentrated THF solution (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Looking to expand the number of available Sn( ii ) alkoxide precursors for subsequent OR/H metathesis ( en route to bulk Sn metal), we targeted the preparation of ImMe 2 ·Sn(O t Bu) 2 ; added motivation for using the small carbene ImMe 2 stems from possible enhanced volatility of the final adduct for future studies involving atomic layer deposition (ALD). 13 Following established literature procedures, 8 b ,14 the free carbene ImMe 2 was generated in situ and combined with tin( ii ) dichloride in a THF solution to produce ImMe 2 ·SnCl 2 ( 2 ) (Scheme 2). Crystals of 2 were obtained from a concentrated THF solution (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Numerous reviews have been written on this topic, covering various aspects ranging from general fundamentals to advanced practical implementations of MOF lms. [48][49][50][51][52][53][54][55][56][57][58] In the following, we describe the most investigated methods for MOF lm preparation.…”
Section: Patterning Techniques Of Mof Thin Filmsmentioning
confidence: 99%
“…Different gas‐phase precursors are alternately passed through the reactor to complete the physical and chemical adsorption or surface reaction on the substrate to generate MOF membranes. [ 62 ] Compared with CVD, ALD can better control the thickness of MOF membranes by the “self‐limiting” surface reactions. In addition, ALD relies on the continuous and self‐saturating surface gas reactions.…”
Section: Fabrication Of Mof Membranesmentioning
confidence: 99%