Atomic Layer Epitaxy Growth of TiN Thin Films

Abstract

AlN thin films were grown by the Atomic Layer E p i t q (ALE) technique employing AIC13 and NH3 as precursors. A growth rate of 1.0 &cycle was obtained in experiments carried out at 500 "C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [OOll direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.

Conformal Nitrogen‐Doped TiO2 Photocatalytic Coatings for Sunlight‐Activated Membranes

“…[13] The N concentration in the N-TiO 2 is dictated by the competition between H 2 O and NH 3 with the TiCl x surface species to form TiO 2 and TiN, respectively. The overall chemical reactions for these two processes can be represented by ( ) (…”

Optimization of Titanium Nitride Rapid Thermal CVD Process

“…Nevertheless, in our case, the variation of the lattice parameter is always higher for TiN layers deposited at 500 C according to the second set of deposition parameters than for TiN layers obtained at 800 C according to the first set of deposition parameters. Moreover, in their study, Ritala et al [16] also observed a variation of the lattice parameter dependent on the oxygen contamination. In their study, thermal stresses could be disregarded because the substrate used (soda lime) exhibits a thermal expansion coefficient of 9.2´10 ±6 K…”

“…Three possibilities can be considered: i) non-stoichiometry of TiN, [14] ii) stresses in the layer, [15] and iii) oxygen contamination. [16] The first point can be dismissed because NRA and RBS analysis always reveal a Ti/N ratio very close to one. For the second point, the variation of the lattice parameter can be due to a development of macrostresses in the layer.…”

Bis(tert‐butylimido)‐bis(dialkylamido) Complexes of Molybdenum as Atomic Layer Deposition (ALD) Precursors for Molybdenum Nitride: the Effect of the Alkyl Group

“…[17] For transition metal nitride ALD, metal halides together with ammonia have been the most widely used precursors. [18][19][20][21][22] With the halide-ammonia ALD system, relatively high deposition temperatures, usually 400-600 8C, have to be used and aggressive hydrogen halides are released as a side product. Recently, novel metal-organic precursors containing amido and imido ligands have been introduced for tantalum, [23] tungsten, [24] and molybdenum.…”