Atomic metal contacts on the semiconductor by CVD

Abstract

The continuing advances in miniaturization of semiconductor devices have seriously challenged the contact technology. This work explored the chemical reaction involved in the bottom-up formation of metal contacts using a linear atomic metal string complex for CVD. The adsorption and surface reaction of the complex on GaN were characterized using x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The complex may anchor on the substrate surface with the metal string inclined to the surface. A change in bonding configuration of the chromium metal-string complex took place upon increasing complex dose to the substrate.