Atomic-scale visualization of initial growth of perovskites on SrTiO 3 (001) using scanning tunneling microscope

Chang, Young Jun; Phark, Soo-hyon

doi:10.1016/j.cap.2016.12.014

Cited by 19 publications

(6 citation statements)

References 117 publications

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“…Its origin is unclear. It could be attributed to the oxygen degassing from the STO substrate 34 , which may slightly damage the Ge layer. p is decreased for all samples at 115 K, which is a general semiconductor behavior owing to the inactivation of acceptors 24 .…”

Section: Resultsmentioning

confidence: 99%

Strain effects on polycrystalline germanium thin films

Imajo

Suemasu

Toko

2021

Sci Rep

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Polycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.

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Section: Resultsmentioning

confidence: 99%

Strain effects on polycrystalline germanium thin films

Imajo

Suemasu

Toko

2021

Sci Rep

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“…An improved understanding and mehtods of manipulating the STO surface are of central importance. The recipes, which commonly consist in a combination of chemical acid etching and thermal annealing, to achieve the atomical A-site (SrO) [11][12][13][14] and B-site (TiO2) [15][16][17][18][19] terminated surfaces have been intensively developed over 20 years. As a result, a TiO2-termination induced by etching is relatively wellunderstood and routinely used nowadays, but the recipe to control a SrO-termination still remains elusive.…”

Section: Introductionmentioning

confidence: 99%

Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface

Yoo

Schwarz

Ulstrup

et al. 2022

J. Korean Phys. Soc.

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We investigated howSrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx segregation. SrOx islands less than 2 𝜇m in size and 1-5 unit cells thick nucleate first and grow in a labyrinth domain pattern. After prolonged annealing, SrOx forms a ~10 nm thick film. We show that the domain pattern can be controlled by introducing a surface miscut angle of SrTiO3. Additionally, the segregated SrOx has a lower work function, compared to that of SrTiO3. These results suggest that the control and tunability of SrOx segregation is applicable to the design of a new functional electronic devices in the semiconducting SrTiO3 based heterostructure.

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“…With this technique thin films were produced utilising pulsed laser deposition within the STM chamber. The film growth was then characterised at an atomic sale without the inhabitation of containments [24], [25], [26] [27]. The measurements were taken using a platinum-iridium tip, with the STM in constant current mode using a current set point 0.1nA, sample bias voltage 0.2V and low scan rate.…”

Section: Stm Case Studiesmentioning

confidence: 99%