2019
DOI: 10.1007/s10853-019-03688-1
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Atomistic simulations for the effects of stacking fault energy on defect formations by displacement cascades in FCC metals under Poisson’s deformation

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Cited by 14 publications
(2 citation statements)
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“…Figure 14(a) and 14(b) are magnified 5,000 and 8,000 times, respectively. In Figure 14(a), the step stripes are clear and without cracks, exhibiting a layered stacking structure with clear texture and no "dendritic" protrusions, consistent with the "spiral dislocation growth mechanism" of crystals (Figure15) 37,38 . In Figure 14(b), the microscopic surface of Mn product is smooth, with no dendrites and ACCEPTED MANUSCRIPT good density.…”
Section: 51testing Of Electrolytic Mn Productssupporting
confidence: 55%
“…Figure 14(a) and 14(b) are magnified 5,000 and 8,000 times, respectively. In Figure 14(a), the step stripes are clear and without cracks, exhibiting a layered stacking structure with clear texture and no "dendritic" protrusions, consistent with the "spiral dislocation growth mechanism" of crystals (Figure15) 37,38 . In Figure 14(b), the microscopic surface of Mn product is smooth, with no dendrites and ACCEPTED MANUSCRIPT good density.…”
Section: 51testing Of Electrolytic Mn Productssupporting
confidence: 55%
“…This different might be explained by the different of stacking fault energy (SFE) between 316SS and the HEAs. According to a previous study on the relationship between SIA loop formation and SFE based on the density function theory (DFT) calculation [14], the number of SIA perfect loops would be higher at lower SFE, leading to an increase in the ratio of glissile SIA clusters with a decrease in SFE. Therefore, the highest loop number density in 316SS would be probably due to the lower SFE compared to the HEAs.…”
Section: Estimation Of Vacancy Migration Energymentioning
confidence: 99%