Auger recombination in long-wavelength strained-layer quantum-well structures

Wang, Jin; Allmen, Paul von; Leburton, Jean–Pierre; Linden, Kurt J.

doi:10.1109/3.375931

Cited by 38 publications

(13 citation statements)

References 17 publications

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“…Auger processes involving phonons are generally not important for relative consideration at room temperature; here as a result, only three BBARs are considered in this study [28]. From Fermis's Golden Rule, the Auger transition rate per unit volume for the CHHS process is given by [29]:…”

Section: Calculation Modelmentioning

confidence: 99%

“…The excited states of particle 2 may be bound (subband) or unbound (even or odd) [28]. In this case, the contribution of each of these bound and unbound states in the Auger recombination will be b A R , e A R , and o A R , respectively [29], where b, e, and o represent bound, even, and odd, respectively.…”

Section: Calculation Modelmentioning

confidence: 99%

“…To calculate effective masses depending on the threshold energy (the minimum energy for the split-off hole in the CHHS Auger process), it is necessary to use the band structure obtained from the k.p model and the following relationship [29,43,44]:…”

Section: mentioning

confidence: 99%

“…The flowchart for calculating effective masses (e.g., split-off holes) is according to [47]. Finally, the Auger coefficient is defined as [29]:…”

Section: mentioning

confidence: 99%

“…F  , and k A for the CHHS Auger process is as follows: The effective band gap relation is written as [29,31,32]:…”

Section: Calculation Modelmentioning

confidence: 99%

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Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Yahyazadeh

2023

Preprint

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In this study, a numerical model was used to analyze the Auger current in c-plane InGaN/GaN multiple-quantum-well light-emitting diodes (MQWLED) under hydrostatic pressure. Finite difference techniques were employed to acquire energy eigenvalues and their corresponding eigenfunctions of \({\text{InGaN/GaN}}\) MQWLED, and the hole eigenstates were calculated via a 6×6 k.p method under applied hydrostatic pressure. Our calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the total Auger coefficient (76% and 20%, respectively). It was found that a change in pressure up to 10 GPa increases the carrier density up to 0.75×1019cm−3 and 0.56×1019cm−3 for the holes and electrons, respectively, and the effective band gap. Based on the result, it could decrease the exaction binding energy, rise the electric field rate up to 0.77MV/cm, and decrease the Auger coefficient and Auger current up to 2.1×10− 31 cm6s− 1and 75A/cm2 in the multiple-quantum well regions, respectively. Our studies provided more detailed insight into the origin of the Auger current drop under hydrostatic pressure in InGaN-based LEDs.

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Section: Calculation Modelmentioning

confidence: 99%

Section: Calculation Modelmentioning

confidence: 99%