Augmented DTSCR With Fast Turn-On Speed for Nanoscale ESD Protection Applications

Du, Feibo; Song, Wenqiang; Hou, Fei; Liu, Zhiwei; Liou, Juin J.; Xiong, Xuanlin; Li, Qingsa; Yang, Liu

doi:10.1109/ted.2020.2965092

Cited by 20 publications

(12 citation statements)

References 9 publications

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“…For example, in [ 15 ], a novel device called thermal-stable DTSCR (TSDTSCR) is proposed to offer an improved ESD protection stability at elevated temperatures, which is realized by optimizing the 3D layout of the DTSCR. In another work, researchers embedded current gain amplifier modules into DTSCR and achieved faster turn-on speed and superior I-V properties [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application

et al. 2023

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In this work, a new low voltage-triggered silicon-controlled rectifier named MTSCR is realized in a 65 nm CMOS process for low voltage-integrated circuits electrostatic discharge (ESD) protections. The MTSCR incorporates an external NMOSs-string, which drives the internal NMOS (INMOS) of MTSCR to turn on, and then the INMOS drive SCR structure to turn on. Compared with the existing low trigger voltage (Vt1) ESD component named diodes-string-triggered SCR (DTSCR), the MTSCR can realize the same low Vt1 characteristic but less area penalty of ~44.3% reduction. The results of the transmission line pulsing (TLP) measurement shows that the MTSCR possesses above 2.42 V holding voltage (Vh) and a low Vt1 of ~5.03 V, making it very suitable for the ESD protections for 1.8 V input/output (I/O) ports in CMOS technologies.

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Section: Introductionmentioning

confidence: 99%

MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application

et al. 2023

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“…The ESD protection diodes are considered to be promising in advanced technology as an ESD protection device [ 6 , 7 , 8 ]. The diode-string silicon-controlled rectifier (DSSCR) with high robustness is also considered as the ESD protection device for previous technology nodes [ 10 , 11 , 12 , 13 , 14 , 15 ], but it is no longer suitable for the 7 nm technology due to its high leakage and large snapback for latch-up. ESD design for the FinFET process is still a great challenge.…”

Section: Introductionmentioning

confidence: 99%

Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection

Zhu

Dong

et al. 2022

Nanomaterials

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A new silicon-controlled rectifier embedded diode (SCR-D) for 7 nm bulk FinFET process electrostatic discharge (ESD) protection applications is proposed. The transmission line pulse (TLP) results show that the proposed device has a low turn-on voltage of 1.77 V. Compared with conventional SCR and diode string, the proposed SCR-D has an additional conduction path constituting by two additional inherent diodes, which results in a 1.8-to-2.2-times current surge capability as compared with the simple diode string and conventional SCR with the same size. The results show that the proposed device meets the 7 nm FinFET process ESD design window and has already been applied in actual circuits.

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“…CE amplifiers are most common fundamental amplifying circuit that produces undistorted output as long as the small-signal base-emitter voltage (vbe) is less than thermal [4]. Emitter resistance RE provides negative feedback which enhances current gain and reduces distortions in the amplified output with 180 0 phase shift [5]. Conventionally, CE amplifiers have wide application in audio amplifiers, basic switch for logic circuits, general analog amplifiers, speakers, microcontrollers and DC motors due to moderate voltage and current gain with moderate input and output impedances [6].…”

Section: Introductionmentioning

confidence: 99%

NPN Sziklai pair small-signal amplifier for high gain low noise submicron voltage recorder

Shukla

Arshad

Srivastava

2022

IJPEDS

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Small signal-to-noise ratio (SNR) and multiple noise sources, coupled with very weak signal amplitudes of bio signals make brain-computer interface (BCI) application studies a challenging task. The front-end recorder amplifiers receive very-weak signal (few μV) from high impedance electrodes and for efficient processing of such weak and low frequency (<1 kHz) signals a high gain amplifier with very low operating voltage and low total harmonic distortion (THD) is required. Existing amplifiers suffer from problem of high non-linearity and low common mode rejection. A good sense amplifier at predeceasing stage can solve this problem. Utilizing very high amplification factor of Sziklai Pair, this paper proposes two circuit topologies of common-emitter and common-collector negative-positive-negative (NPN) Sziklai Pair small signal amplifiers suitable for use in preamplifier stages of such signal acquisition circuit. Present study provides broad-spectrum of analysis of these amplifiers covering effect of additional biasing resistance RA, variation of ‘ideal forward maximum beta’ β, temperature dependency, noise sensitivity and phase variation. The tunable capability of first topology makes it a suitable candidate in wide variety of other applications. The first amplifier operates on very low input voltage range (0.1μV-6mV) whereas the second amplifier works on 100 μV-11 mV range of input voltage.

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Augmented DTSCR With Fast Turn-On Speed for Nanoscale ESD Protection Applications

Cited by 20 publications

References 9 publications

MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application

MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application

Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection

NPN Sziklai pair small-signal amplifier for high gain low noise submicron voltage recorder

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