Abstract:Photo-electron sources using GaAs-based photocathodes are used to provide high-brightness and high-current beams of (spin-polarized) electrons for accelerator applications such as free-electron lasers (FELs) and energy recovery linacs (ERLs). Such cathodes require a thin surface layer to achieve negative electron affinity (NEA) for photoemission. The layer is deposited during an activation procedure that greatly influences the resulting quantum efficiency of the photocathode and robustness of the layer. To sta… Show more
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