Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

High-Gain InAs Avalanche Photodiodes

“…The gain difference between the structure in [4] and the graded structure here are much smaller at 77 K than at 300 K. This is consistent with the conclusion in Ref. [7], where it was found that unlike at room temperature, at 77 K a thicker depletion region does not result in higher gain because the electron ionization coefficient has stronger dependence on electric field at 77 K. Therefore at 77 K, the gain of the graded structure reported here is only comparable to the gain reported in Ref. [4] even though the graded structure has wider depletion region.…”

“…As shown in Fig. 14, the simulated gain agrees with the measurement in [7] at 300 K. At 77 K, the increasing rate of gain appears to be slightly different between simulation and measurement; this is probably due to the change of electric…”

“…Monte Carlo simulation is employed to study the impact ionization properties of these APDs. Good agreement is obtained between the simulations and measurements [3]- [7].…”

“…10. [7] (open symbols) and simulated (closed symbols) gain of InAs p-i-n structure with 3.5-μm-thick i-region at both 300 and 77 K. Figure 12 shows the measured and simulated excess noise factor versus gain for the UID and graded structures. These results are also consistent with k~0.…”

“…The energies of the L and X minima, E L and E X , respectively, are assumed to have the same temperature dependence as that of the conduction band minimum, E [17]. First the model was calibrated by simulation of the InAs p-i-n structure with 3.5 μm thick i-region reported in [7]. As shown in Fig.…”