Avalanche semiconductor radiation detectors

Sadygov, Z.; Железных, И. М.; Malakhov, N.; Jejer, V.; Kirillova, Tatiana A.

doi:10.1109/23.510748

Cited by 25 publications

(5 citation statements)

References 3 publications

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“…The SiPM is an array of parallelly connected single-photon avalanche diodes (SPADs), also known as Geiger-mode avalanche photodiodes (APDs), that are operated above the breakdown voltage. Since a single photon creates an electron-hole pair and results in the large avalanche current through the avalanche multiplication process, the SiPM enables the detection of a single photon [3]. Moreover, each microcell generates approximately constant charges that are proportional to the sensor capacitance and the applied bias voltage.…”

Section: Conventional Integration Methodsmentioning

confidence: 99%

Development of circuit integrated monolithic SOI-SiPM for radiation detection

Kim¹,

Koyama²,

Shimazoe³

et al. 2020

J. Inst.

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Section: Conventional Integration Methodsmentioning

confidence: 99%

Development of circuit integrated monolithic SOI-SiPM for radiation detection

Kim¹,

Koyama²,

Shimazoe³

et al. 2020

J. Inst.

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“…Micro pixel avalanche Photodiode (MAPD) was invented in 1996 [1][2][3]. MAPD with surface pixel structure are widely investigated and produced [4,5].…”

Section: Introductionmentioning

confidence: 99%

“…The surface pixel structure allowed to decrease crosstalk, recovery time, increase gain and pixel density up to 10000 pixels/mm 2 and so on [4][5][6]. The disadvantages of this structure were that a certain part of the sensitive area was occupied by quenching resistors, isolation channels and a contact bus [1,3]. These disadvantages play a key role in the reduction of the photon detection efficiency (PDE) of MAPD.…”

Section: Introductionmentioning

confidence: 99%

Investigation of parameters of new MAPD-3NM silicon photomultipliers

Ahmadov

Akbarov

et al. 2022

J. Inst.

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In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.

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“…In contrast to photo tubes SiPMs are insensitive to magnetic fields. The development started about a decade ago, mainly in Russia [1][2][3]. When the first prototypes became available they triggered large interest for many applications, like calorimeters, air-shower Cerenkov telescopes, medical applications etc.…”

Section: Introductionmentioning

confidence: 99%

Development of backside illuminated silicon photomultipliers at the MPI semiconductor laboratory

Guenther¹

2008

Proceedings of International Workshop on New Photon-Detectors — PoS(PD07)

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Silicon Photomultipliers (SiPM) are novel detectors for low level light detection based on arrays of avalanche photodiodes operating in Geiger mode. Though their quantum efficiency is already comparable or better than that of bialkali photomultiplier tubes it is still limited by the structures on the light sensitive front surface. A new concept, presently developed at the Max-Planck semiconductor laboratory, allows boosting the efficiency to almost 100%. Using a fully depleted substrate the light enters through the unstructured backside. A drift diode structure collects the electrons on a small "point like" avalanche structure for multiplication. Engineering the thin entrance window at the backside using anti-reflective layers a high efficiency can be achieved in a wide wavelength range (300-1000nm). Disadvantages are higher dark rate and increased crosstalk. Results from first test structures and device simulations will be presented. Applications in Particle Physics will be discussed.

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Avalanche semiconductor radiation detectors

Cited by 25 publications

References 3 publications

Development of circuit integrated monolithic SOI-SiPM for radiation detection

Development of circuit integrated monolithic SOI-SiPM for radiation detection

Investigation of parameters of new MAPD-3NM silicon photomultipliers

Development of backside illuminated silicon photomultipliers at the MPI semiconductor laboratory

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