BaBiO3: A potential absorber for all-oxide photovoltaics

Chouhan, Arun Singh; Athresh, Eashwer; Ranjan, Rajeev; Raghavan, Srinivasan; Avasthi, Sushobhan

doi:10.1016/j.matlet.2017.09.038

Cited by 34 publications

(32 citation statements)

References 12 publications

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“…In addition, the distinction between Bi 3+ and Bi 5+ in Bi4f photoelectron spectra can be vague, as was observed for compounds with mixed bismuth valence states such as BaBiO3. [73][74][75] For both NiO and CoOx a similar Schottky-type barrier height between 1.0-1.1 eV is obtained. Similarly, in our previous work we obtained a Schottky-type barrier height of 1.1 eV for the BiVO4/RuO2 interface.…”

Section: Resultssupporting

confidence: 52%

Analysis of the interfacial characteristics of BiVO₄/metal oxide heterostructures and its implication on their junction properties

Hermans

Murcia-López

Klein

et al. 2019

Phys. Chem. Chem. Phys.

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Section: Resultssupporting

confidence: 52%

Analysis of the interfacial characteristics of BiVO₄/metal oxide heterostructures and its implication on their junction properties

Hermans

Murcia-López

Klein

et al. 2019

Phys. Chem. Chem. Phys.

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“…BBO, a well‐known parent material for the high‐ T C superconducting compounds Ba 1− x K x BiO 3 and BaPb 1‐ x Bi x O 3 , adopts a monoclinically distorted perovskite structure (space group: I2/m) at room temperature, with a pseudocubic lattice constant of ≈4.36 Å (e.g., ICSD‐67073). Recently, BBO was used as potential absorber for all‐oxide solar cells and as photocatalyst for water reduction . Within the pseudocubic cells of BBO, the BiO 6 ‐octahedra show about 10° rotations that can be described by the Glazer notation a P − b P − c P 0 , whereas the BiO bond varies between 2.11 and 2.29 Å for adjacent octahedra leading to the so‐called breathing mode distortion …”

mentioning

confidence: 99%

Atomic‐Scale Interface Structure in Domain Matching Epitaxial BaBiO₃ Thin Films Grown on SrTiO₃ Substrates

Jin

Zapf

Stübinger

et al. 2020

Physica Rapid Research Ltrs

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The electronic structures of BaBiO3 (BBO) thin films grown on SrTiO3 substrates are found to be thickness dependent. The origin of this behavior remains under debate and has been suggested to be attributed to the structural and compositional modifications at the BBO/SrTiO3 interface during the first stage of film growth. Though a wetting layer with thickness of ≈1 nm has been experimentally identified at the interface, details on the microstructures of such a layer and their effect on the subsequent film growth are lacking so far, particularly at the atomic scale. Herein, atomic‐resolution scanning transmission electron microscopy is used to study the interface structure of a 30 nm‐thick BBO film grown on an Nb‐doped SrTiO3 (STO) substrate through domain matching epitaxy. An interfacial δ‐Bi2O3 (BO)‐like phase with fluorite structure is identified, showing a layer‐by‐layer spacing of ≈3.2 Å along the growth direction. The orientation relationship between the BO‐like phase and surrounding perovskites (P) is found to be <001>BO||<001>P and <110>BO||<100>P. The presence of the BO‐like phase results in two types of interfaces, i.e., a coherent BO/STO and a semicoherent BBO/BO interface. Thickness variations are observed in the BO‐like layer, resulting in the formation of antiphase domains in the BBO films.

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“…7). The value of the conduction band (E c ) is À0.18 eV according to the equation (Zhang et al, 2018;Chouhan et al, 2018). The thermal stability of (I) was measured.…”

Section: Figurementioning

confidence: 99%

A Co-MOF with a (4,4)-connected binodal two-dimensional topology: synthesis, structure and photocatalytic properties

et al. 2019

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The Co-MOF poly[[diaqua{μ4-1,1,2,2-tetrakis[4-(1H-1,2,4-triazol-1-yl)phenyl]ethylene-κ4 N:N′:N′′:N′′′}cobalt(II)] benzene-1,4-dicarboxylic acid benzene-1,4-dicarboxylate], {[Co(C34H24N12)(H2O)2](C8H4O4)·C8H6O4} n or {[Co(ttpe)(H2O)2](bdc)·(1,4-H2bdc)} n , (I), was synthesized by the hydrothermal method using 1,1,2,2-tetrakis[4-(1H-1,2,4-triazol-1-yl)phenyl]ethylene (ttpe), benzene-1,4-dicarboxylic acid (1,4-H2bdc) and Co(NO3)2·6H2O, and characterized by single-crystal X-ray diffraction, IR spectroscopy, powder X-ray diffraction (PXRD), luminescence, optical band gap and valence band X-ray photoelectron spectroscopy (VB XPS). Co-MOF (I) shows a (4,4)-connected binodal two-dimensional topology with a point symbol of {44·62}{44·62}. The two-dimensional networks capture free neutral 1,4-H2bdc molecules and bdc2− anions, and construct a three-dimensional supramolecular architecture via hydrogen-bond interactions. MOF (I) is a good photocatalyst for the degradation of methylene blue and rhodamine B under visible-light irradiation and can be reused at least five times.

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BaBiO3: A potential absorber for all-oxide photovoltaics

Cited by 34 publications

References 12 publications

Analysis of the interfacial characteristics of BiVO₄/metal oxide heterostructures and its implication on their junction properties

Analysis of the interfacial characteristics of BiVO₄/metal oxide heterostructures and its implication on their junction properties

Atomic‐Scale Interface Structure in Domain Matching Epitaxial BaBiO₃ Thin Films Grown on SrTiO₃ Substrates

A Co-MOF with a (4,4)-connected binodal two-dimensional topology: synthesis, structure and photocatalytic properties

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BaBiO3: A potential absorber for all-oxide photovoltaics

Cited by 34 publications

References 12 publications

Analysis of the interfacial characteristics of BiVO4/metal oxide heterostructures and its implication on their junction properties

Analysis of the interfacial characteristics of BiVO4/metal oxide heterostructures and its implication on their junction properties

Atomic‐Scale Interface Structure in Domain Matching Epitaxial BaBiO3 Thin Films Grown on SrTiO3 Substrates

A Co-MOF with a (4,4)-connected binodal two-dimensional topology: synthesis, structure and photocatalytic properties

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Analysis of the interfacial characteristics of BiVO₄/metal oxide heterostructures and its implication on their junction properties

Analysis of the interfacial characteristics of BiVO₄/metal oxide heterostructures and its implication on their junction properties

Atomic‐Scale Interface Structure in Domain Matching Epitaxial BaBiO₃ Thin Films Grown on SrTiO₃ Substrates