Back-End Integrable On-Chip MIM Decoupling Capacitors Featuring High Capacitance With Ultra-Low Leakage Current by Nitrogen-Incorporated HfZrO<sub>x</sub>

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Back-End Integrable On-Chip MIM Decoupling Capacitors Featuring High Capacitance With Ultra-Low Leakage Current by Nitrogen-Incorporated HfZrO_x

Cited by 6 publications

References 15 publications

AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material

AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material

Fabrication and characterization of quasi-three-dimensional capacitor structure based on carbon nanowalls

Ta2O5 doping effects on the property improvement of HfOx-based RRAMs using co-sputtering deposition method

Contact Info

Product

Resources

About

Back-End Integrable On-Chip MIM Decoupling Capacitors Featuring High Capacitance With Ultra-Low Leakage Current by Nitrogen-Incorporated HfZrOx

Cited by 6 publications

References 15 publications

AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material

AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material

Fabrication and characterization of quasi-three-dimensional capacitor structure based on carbon nanowalls

Ta2O5 doping effects on the property improvement of HfOx-based RRAMs using co-sputtering deposition method

Contact Info

Product

Resources

About

Back-End Integrable On-Chip MIM Decoupling Capacitors Featuring High Capacitance With Ultra-Low Leakage Current by Nitrogen-Incorporated HfZrO_x