Balancing the etching and passivation in time-multiplexed deep dry etching of silicon

Blauw, M. A.; Zijlstra, T.; Drift, E. van der

doi:10.1116/1.1415511

Cited by 126 publications

(92 citation statements)

References 13 publications

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“…Etching under an angle limits the consistency of the quality of the pores over the entire wafer, since not all etch mask openings that define the pores are etched from the same height in the plasma, which influences the etching rate and -behavior. 19 Furthermore, because one and the same etch mask is used for etching in both directions, the diversity of three-dimensional structures that can be made using this technique is limited.…”

Section: Introductionmentioning

confidence: 99%

Method to pattern etch masks in two inclined planes for three-dimensional nano- and microfabrication

Tjerkstra¹,

Woldering²,

Broek³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Method to pattern etch masks in two inclined planes for three-dimensional nano-and microfabricationTjerkstra Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The authors present a method to pattern etch masks for arbitrary nano-and microstructures on different, inclined planes of a sample. Our method allows standard CMOS fabrication techniques to be used in different inclined planes; thus yielding three-dimensional structures with a network topology. The method involves processing of the sample in a first plane, followed by mounting the prepared sample in a specially designed silicon holder wafer such that the second, inclined plane is exposed to continued processing. As a proof of principle we demonstrate the fabrication of a patterned chromium etch mask for three-dimensional photonic crystals in silicon. The etch mask is made on the 90 inclined plane of a silicon sample that already contains high aspect ratio nanopores. The etch mask is carefully aligned with respect to these pores, with a high translational accuracy of <30 nm along the y-axis and a high rotational accuracy of 0.71 around the z-axis of the crystal. Such high alignment precisions are crucial for nanophotonics and for sub-micrometer applications in general. Although we limit ourselves to processing on two planes of a sample, it is in principle possible to repeat the presented method on more planes. The authors foresee potential applications of this technique in, e.g., microfluidics, photonics, and three-dimensional silicon electronics.

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Section: Introductionmentioning

confidence: 99%

Method to pattern etch masks in two inclined planes for three-dimensional nano- and microfabrication

Tjerkstra¹,

Woldering²,

Broek³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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“…Our simulation results also verify that detectors with nanometer sized pillars could have 30% detection efficiency than its micron sized counter part. (Figure 3b) Second, we have successfully demonstrated the fabrication of 3D nanometer sized pillar system of various diameters using deep reactive ion etching 3) and nanosphere lithography (Figure 4). Moreover, we can fabricate pillars with sub micron size and 1:10 aspect ratio in this regime.…”

Section: Research Activities/results/technical Outcome (For Neutron Dmentioning

confidence: 99%

FY05 LDRD Final ReportNanomaterials for Radiation Detection

Wang¹,

Létant²,

Nikolić³

et al. 2006

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“…Although not pursued in the current study, profile control with further precision may be possible by fine tuning the etch parameters and consulting the relevant literature. [54][55][56][57][58][59] Figures 4(a) and 4(b) show etched large square fields (p ¼ 5 lm, s ¼ 7 lm) before and after removal of the sacrificial structures, respectively. The sacrificial structures partially collapsed during the wafer cleaning and SiO 2 etching after DRIE, but were completely removed from the wafer surface and structures.…”

Section: Resultsmentioning

confidence: 99%

Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses

Stöhr

Michael-Lindhard

Hübner

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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O. (2015). Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 33(6), [062001]. DOI: 10.1116/1.4931622 Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses This article describes the realization of complex high-aspect ratio silicon structures with feature dimensions from 100 lm to 100 nm by deep reactive ion etching using the Bosch process. As the exact shape of the sidewall profiles can be crucial for the proper functioning of a device, the authors investigated how sacrificial structures in the form of guarding walls and pillars may be utilized to facilitate accurate control of the etch profile. Unlike other sacrificial structuring approaches, no silicon-on-insulator substrates or multiple lithography steps are required. In addition, the safe removal of the sacrificial structures was accomplished by thermal oxidation and subsequent selective wet etching. The effects of the dimensions and relative placement of sacrificial walls and pillars on the etching result were determined through systematic experiments. The authors applied this process for exact sidewall control in the manufacture of x-ray lenses that are very sensitive to sidewall shape nonuniformities. Compound kinoform lenses for focusing hard x-rays with structure heights of 200 lm were manufactured, and the lenses were tested in terms of their focusing ability and refracting qualities using synchrotron radiation at a photon energy of 17 keV. A 180 lm long line focus with a waist of 430 nm at a focal length of 215 mm was obtained.

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Balancing the etching and passivation in time-multiplexed deep dry etching of silicon

Cited by 126 publications

References 13 publications

Method to pattern etch masks in two inclined planes for three-dimensional nano- and microfabrication

Method to pattern etch masks in two inclined planes for three-dimensional nano- and microfabrication

FY05 LDRD Final ReportNanomaterials for Radiation Detection

Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses

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