Band alignment type I, II transformations in Hf2CO2/MoS2 heterostructures using biaxial strain, external electric field, and interlayer coupling: a first principal investigation

Sukhanova, Ekaterina V.; Popov, Zakhar I.

doi:10.1039/d3cp04546c

Phys. Chem. Chem. Phys.

2023

DOI: 10.1039/d3cp04546c

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Band alignment type I, II transformations in Hf₂CO₂/MoS₂ heterostructures using biaxial strain, external electric field, and interlayer coupling: a first principal investigation

Ekaterina V. Sukhanova,

Zakhar I. Popov

Abstract: The transition to neuromorphic devices is relevant to the development of materials capable of providing electronic switching in response to external stimuli.

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Band alignment type I, II transformations in Hf₂CO₂/MoS₂ heterostructures using biaxial strain, external electric field, and interlayer coupling: a first principal investigation

Abstract: The transition to neuromorphic devices is relevant to the development of materials capable of providing electronic switching in response to external stimuli.

Cited by 3 publications

References 68 publications

3D/2D lead-free halide perovskite CsSnBr3/MoX (X = Se2, SSe, S2) heterostructures for high-efficiency solar cell: Interface engineering strategies and transition of band alignments

3D/2D lead-free halide perovskite CsSnBr3/MoX (X = Se2, SSe, S2) heterostructures for high-efficiency solar cell: Interface engineering strategies and transition of band alignments

Direct Z-scheme GeC/GaSe heterojunction by first-principles study for photocatalytic water splitting

Biaxial strain-modulated power conversion efficiency, electronic structures, and optical properties of type-II MoS2/BC6N vdW heterostructure: A density functional theory study

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