Band gap tuning in As40Se53Sb07 thin films by 532 nm laser irradiation: An optical investigation by spectroscopic techniques

Pradhan, Prabhudutta; Naik, Ramakanta; Das, Nipu Kumar; Панда, А. К.

doi:10.1016/j.optmat.2017.11.037

Cited by 34 publications

(10 citation statements)

References 55 publications

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“…1. The small humps appeared at different θ values are due to the glass substrates used for film preparation (Pradhan et al 2018). However, when the film was annealed at 523 K, the corresponding structure transformed from amorphous to crystalline as shown in Fig.…”

Section: (A) Xrd Studymentioning

confidence: 95%

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

Sahoo¹,

Priyadarshini²,

Dandela³

et al. 2021

Opt Quant Electron

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The present work reports the amorphous-crystalline phase transformation in thermally evaporated As 50 Se 50 thin films upon annealing at below T g (423 K) and above T g (523 K). The structural transition was probed by XRD, Raman and X-ray photoelectron spectroscopy. The composition and surface morphology were probed by EDS and FESEM techniques. The transmittance and reflectance spectra over the wavelength range 500 nm-1200 nm were used to deduce the optical parameters. The various optical parameters of the as-prepared and annealed As 50 Se 50 thin films were estimated and discussed in terms of density of defect states and disorders. The indirect optical energy gap decreased for the 423 K annealed film and abruptly increased for 523 K annealed film as compared to the as-prepared film. The Swanepoel envelope method, WDD model, and Sellemeire postulates were employed for the analysis of refractive index, static refractive index, oscillator energy, dispersion energy, oscillator wavelength and dielectric constant. The changes in the linear and nonlinear properties showed opposite behavior for the two annealed films. The non-linear refractive index and 3rd order susceptibility were found to be increased for 423 K annealed film and decreased for the 523 K annealed film. The optical as well as the electrical conductivity changed with annealing and the electrical susceptibility increased for 523 K annealed film. The tunable optical properties can be applied for several optoelectronic applications.

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Section: (A) Xrd Studymentioning

confidence: 95%

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

Sahoo¹,

Priyadarshini²,

Dandela³

et al. 2021

Opt Quant Electron

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“…2,3 It leads to bond breaking and rearrangements resulting in modications of localized structures of the amorphous material that ultimately brings out the changes in physical and optical properties such as transmittance, absorption and extinction coefficient, refractive index and optical bandgap, etc. [4][5][6] The change in bandgap values mainly leads to two important phenomena, photodarkening (PD) 7 (decrease in bandgap) and photobleaching (PB) 8 (increase in bandgap). The PD is most oen observed in arsenic-based lms 9 whereas PB is common in Ge-based chalcogenide lms caused by the intrinsic structural changes.…”

Section: Introductionmentioning

confidence: 99%

“… 22,23 The thermal and electrical parameters of Se 65− x As 35 Sb x films were calculated from the resistivity-temperature dependence studies. 24 Pradhan et al have studied the in situ kinetics of the linear optical changes in As 40 Se 53 Sb 07 films 5 and the ex situ 3 rd order nonlinearity change. 25 Though ex situ linear and nonlinear optical properties have been studied to some extent, 26,27 the in situ nonlinear/linear dynamic response of the As–Se–Sb materials upon laser irradiation is very rare.…”

Section: Introductionmentioning

confidence: 99%

In situlaser irradiation: the kinetics of the changes in the nonlinear/linear optical parameters of As₅₀Se₄₀Sb₁₀thin films for photonic applications

et al. 2021

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“…It provides essential information regarding the type of band structure and optical bandgap of the film. The absorption coefficient (α) was calculated by using the transmission and reflection data as follows 47 :…”

Section: Transmission Absorption Coefficient Extinction Coefficient O...mentioning

confidence: 99%

Effect of Sb addition on Sb_xSn_1‐_xS thin films: The structural, morphological, and linear/nonlinear optical changes for optoelectronic applications

et al. 2022

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The current paper reports the changes in the structural and optical properties of antimony-doped tin sulfide ternary (Sb x Sn 1-x S) (x = 0, 0.05, 0.1, 0.15, 0.2) thin films synthesized by the thermal evaporation technique on a glass substrate. Structural characterization techniques such as X-ray diffraction and Raman spectroscopy of the prepared sample revealed that the thin films are crystalline in nature. The nanoflake-like structure was found from the surface morphological analysis performed by field emission scanning electron microscopy. The concentration of the compositional elements was confirmed from the energy dispersive X-ray analysis. The linear and nonlinear optical parameters were calculated by using the transmission data obtained from UV-vis spectroscopy in the range of 800-1100 nm. The optical measurements showed an increase in transmittance and shifting of the absorption edge. The optical bandgap increased (1.239-1.378 eV) and the refractive index decreased with the increase of Sb concentration, satisfying the Moss rule. The nonlinear susceptibility and the nonlinear refractive index (n 2 ) decreased with Sb content. The changes in both linear and nonlinear parameters by varying the antimony doping concentration could be helpful for controlling the optical properties of Sb x Sn 1-x S thin films and could be a suitable candidate for many photonics and optoelectronic applications.

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Band gap tuning in As40Se53Sb07 thin films by 532 nm laser irradiation: An optical investigation by spectroscopic techniques

Cited by 34 publications

References 55 publications

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

In situlaser irradiation: the kinetics of the changes in the nonlinear/linear optical parameters of As₅₀Se₄₀Sb₁₀thin films for photonic applications

Effect of Sb addition on Sb_xSn_1‐_xS thin films: The structural, morphological, and linear/nonlinear optical changes for optoelectronic applications

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Band gap tuning in As40Se53Sb07 thin films by 532 nm laser irradiation: An optical investigation by spectroscopic techniques

Cited by 34 publications

References 55 publications

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As50Se50 thin films

In situlaser irradiation: the kinetics of the changes in the nonlinear/linear optical parameters of As50Se40Sb10thin films for photonic applications

Effect of Sb addition on SbxSn1‐xS thin films: The structural, morphological, and linear/nonlinear optical changes for optoelectronic applications

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Product

Resources

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In situlaser irradiation: the kinetics of the changes in the nonlinear/linear optical parameters of As₅₀Se₄₀Sb₁₀thin films for photonic applications

Effect of Sb addition on Sb_xSn_1‐_xS thin films: The structural, morphological, and linear/nonlinear optical changes for optoelectronic applications