Bandgap energy bowing parameter of strained and relaxed InGaN layers

Orsal, G.; Gmili, Youssef El; Fressengeas, Nicolas; Streque, Jérémy; Djerboub, R.; Moudakir, T.; Sundaram, S.; Ougazzaden, A.; Salvestrini, Jean Paul

doi:10.1364/ome.4.001030

Cited by 87 publications

(54 citation statements)

References 34 publications

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“…Near band edge emission peaks are observed at 502.12 nm corresponding to the bandgap of 2.46 eV. Due to stoke shift of the PL spectra and the discrepancies in the exact value of InN bandgap, 16 there is a lot of ambiguity in exact In content determination from PL spectra. A small hump is observed around 425 nm, which might be due to the initial layers with large number of dislocations arising due to the large lattice mismatch of Si and InGaN films.…”

Section: Methodsmentioning

confidence: 99%

Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

Chandan

Mukundan

Mohan

et al. 2015

Journal of Applied Physics

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n-n isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray diffraction studies were carried out to confirm the formation of epilayers on Si (111). X-ray rocking curves revealed the presence of large number of edge threading dislocations at the interface. Room temperature photoluminescence studies were carried out to confirm the bandgap and the presence of defects. Temperature dependent I-V measurements of Al/InGaN/Si (111)/Al taken in dark confirm the rectifying nature of the device. I-V characteristics under UV illumination, showed modest rectification and was operated at zero bias making it a self-powered device. A band diagram of the heterojunction is proposed to understand the transport mechanism for self-powered functioning of the device.

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Section: Methodsmentioning

confidence: 99%

Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

Chandan

Mukundan

Mohan

et al. 2015

Journal of Applied Physics

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“…This red-shift is in good agreement with results previously published in the literature. [47][48][49] …”

Section: Nanometrically Resolved Optical Emission In Quasi-bulk Inganmentioning

confidence: 99%

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Pantzas

Patriarche

Tománek

et al. 2015

Journal of Applied Physics

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Advanced electron microscopy techniques are combined for the first time to measure the composition, strain, and optical luminescence, of InGaN/GaN multi-layered structures down to the nanometer scale. Compositional fluctuations observed in InGaN epilayers are suppressed in these multi-layered structures up to a thickness of 100 nm and for an indium composition of 16%. The multi-layered structures remain pseudomorphically accommodated on the GaN substrate and exhibit single-peak, homogeneous luminescence so long as the composition is homogeneous. V C 2015 AIP Publishing LLC. [http://dx.

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“…The as‐grown quantum wells can be assumed to be completely strained, so their In concentration can be obtained from Vegard's law for the bandgap of an InGaN bulk alloy as reproduced in Eq. :

\begin{matrix} true \\ right E_{g} ((), I n_{x} G a_{1 - x} N) & = & left x \times E_{g} ((), I n N) + ((), 1 - x) \times E_{g} ((), G a N) \\ left - b x ((), 1 - x), \end{matrix}

where E g ( GaN ) = 3.39 eV and E g ( InN ) = 0.77 eV are the bandgaps of GaN and InN (Matsuoka et al ., ; Islam et al ., ) and b is a bowing factor which is believed to be b = 1.32 eV for a fully strained and b = 2.87 eV for a relaxed InGaN layer (Orsal et al ., ). The In concentration correlated with the broad photoluminescence (PL) peak in the as‐grown sample would then indicate values of x = 0.175 ± 0.06, respectively, which correlates well with our above quantification from EDXS.…”

Section: Resultsmentioning

confidence: 97%

Self‐consistent absorption correction for quantifying very noisy X‐ray maps: group III nitride nanowires as an example

Wang

Bai

Walther

2018

Journal of Microscopy

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Energy-dispersive X-ray mapping in a scanning transmission electron microscope is a method to visualize the spatial distribution of chemical elements in a sample. Quantification of the signal intensities depends on proper background elimination and correction of the self-absorption of X-ray lines in the sample. Here we show that our previously developed method of self-consistent effective absorption factors works well even with extremely noise elemental maps of a few net counts only where the human eye can hardly discern any pattern and the background signal is typically less than a single count in each spectrum channel. Correcting the background intensity to sub-pixel accuracy is then necessary for reliable quantification.

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Bandgap energy bowing parameter of strained and relaxed InGaN layers

Cited by 87 publications

References 34 publications

Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Self‐consistent absorption correction for quantifying very noisy X‐ray maps: group III nitride nanowires as an example

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