Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

Kumar, Ashutosh; Heilmann, Martin; Latzel, Michael; Kapoor, Ritika; Sharma, Intu; Göbelt, Manuela; Christiansen, Silke; Kumar, Vikram; Singh, Rajendra

doi:10.1038/srep27553

Cited by 37 publications

(21 citation statements)

References 59 publications

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“…As such, the set up shown in Figure 3 (a) measures the voltage fluctuations in the signal. The spectral power density of current fluctuations at zero bias can be obtained from the relationship 33,34 = η ( )…”

Section: Noise Equivalent Power and Linearmentioning

confidence: 81%

“…As such, the set up shown in Figure (a) measures the voltage fluctuations in the signal. The spectral power density of current fluctuations at zero bias can be obtained from the relationship , where S v is the spectral power density of voltage fluctuations, I is either the dark or the photocurrent at zero bias, η is the ideality factor, k is the Boltzmann constant, and T is the temperature. The noise current can be evaluated from the square root of spectral density of current fluctuations which is shown in Figure b.…”

Section: Noise Equivalent Power and Linear Dynamic Rangementioning

confidence: 99%

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Ultra-Low Noise and Self-Powered β-Ga₂O₃ Deep Ultraviolet Photodetector Array with Large Linear Dynamic Range

Tak

Singh

2021

ACS Appl. Electron. Mater.

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Self-powered ultraviolet (UV) photodetectors are the need of the hour for the current technology to harvest the charge carriers without power consumption. β-Ga 2 O 3 deep UV photodetectors working at zero bias have been investigated here for potential applications in high-definition imaging. The photodetector exhibits an ultralow dark current of 8.6 ± 3.4 fA at zero bias. The initial results of low frequency noise measurements are reported for β-Ga 2 O 3 deep UV photodetectors. An ultralow noise current of 9.1 × 10 −16 A/Hz 1/2 at 1 Hz is obtained in the self-powered condition. Such an ultralow noise current suggests the potential of this device in detecting very weak optical signals. The thermal noise current limited transport mechanism is found to dominate in comparison to shot noise and flicker noise in the self-powered mode. The linear dynamic range (LDR) of 88.5 dB is achieved which is very useful for highresolution imaging. The dark current, noise floor, and LDR of the photodetector are the benchmark for β-Ga 2 O 3 self-powered deep UV photodetectors. A 3 × 4 two-dimensional photodetector array with uniform dark and photocurrent across all of the pixels is also demonstrated. The outcomes of the present work are encouraging for imaging applications of β-Ga 2 O 3 based energy-efficient deep UV photodetectors.

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Section: Noise Equivalent Power and Linearmentioning

confidence: 81%

Section: Noise Equivalent Power and Linear Dynamic Rangementioning

confidence: 99%

Ultra-Low Noise and Self-Powered β-Ga₂O₃ Deep Ultraviolet Photodetector Array with Large Linear Dynamic Range

Tak

Singh

2021

ACS Appl. Electron. Mater.

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“…Figure 3a represents the extracted ideality factors and barrier heights of the Pd/Si-based FS-GaN Schottky diodes. It is essential to state that the inhomogeneity of the barrier height in the contact induces the gradient of the barrier height and the ideality factor of the diodes at ~260 K [19,20]. Furthermore, it was found that the drastic increment of current at 260 K in T-I-V curves also supports this behavior.…”

Section: Resultsmentioning

confidence: 97%

Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN

Lee

Ahn

et al. 2020

Nanomaterials

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In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current–voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 103–105 at the forward to reverse current at ±1 V. The interface states and non-interacting point defect complex between the Pd metal and FS-GaN crystals induced the inhomogeneity of the barrier height and large ideality factors. Furthermore, we revealed that the electronic conduction of the devices prefers the thermionic field emission (TFE) transport, not the thermionic emission (TE) model, over the entire measurement conditions. The investigation on deep level transient spectroscopy (DLTS) suggests that non-interacting point-defect-driven tunneling influences the charge transport. This investigation about charge transport paves the way to achieving next-generation optoelectronic applications using Si-based FS-GaN Schottky diodes.

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“…A constant current of 2 nA was applied to the device from a constant current source, and the variation in spectral power density of voltage fluctuations (S V ) was measured as a function of frequency. The S V can then be converted to S I using the formula [36] :…”

Section: Stability Noise and Detectivitymentioning

confidence: 99%

High‐Performance Air‐Stable 2D‐WSe₂/P3HT Based Inorganic–Organic Hybrid Photodetector with Broadband Visible to Near‐IR Light Detection

Khanikar,

Dewan,

John

et al. 2023

Adv Elect Materials

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Photodetectors that can achieve high‐speed photoresponse and high responsivity with broadband detection are essential for bio‐health monitoring, imaging, chemical sensing, and many other applications. Herein a high‐performance inorganic–organic hybrid photodetector based on a heterojunction of exfoliated 2D tungsten diselenide (WSe2) layers and solution‐processable poly(3‐hexylthiophene‐2,5‐diyl), P3HT is reported. The heterojunction shows enhanced exciton harvesting through long‐range energy transfer from P3HT to WSe2, which is confirmed using photoluminescence quenching and fluorescence decay measurements. The detector shows broadband light detection from visible to near‐infrared (NIR) (400−1100 nm), and air‐stable device performance. The device exhibits the highest responsivity of 17.6 AW−1 for low incident light intensity (<10−5 W cm−2) at 640 nm wavelength of light. Furthermore, a fast photoresponse speed with a rise/fall time of 9.5/5.1 µs, which retained its performance for more than four months under ambient conditions is demonstrated. The superior device performance presented here using an inorganic–organic hybrid heterojunction is the key to producing novel high‐performance and air‐stable photodetectors with broad spectral bandwidth.

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Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

Cited by 37 publications

References 59 publications

Ultra-Low Noise and Self-Powered β-Ga₂O₃ Deep Ultraviolet Photodetector Array with Large Linear Dynamic Range

Ultra-Low Noise and Self-Powered β-Ga₂O₃ Deep Ultraviolet Photodetector Array with Large Linear Dynamic Range

Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN

High‐Performance Air‐Stable 2D‐WSe₂/P3HT Based Inorganic–Organic Hybrid Photodetector with Broadband Visible to Near‐IR Light Detection

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Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

Cited by 37 publications

References 59 publications

Ultra-Low Noise and Self-Powered β-Ga2O3 Deep Ultraviolet Photodetector Array with Large Linear Dynamic Range

Ultra-Low Noise and Self-Powered β-Ga2O3 Deep Ultraviolet Photodetector Array with Large Linear Dynamic Range

Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN

High‐Performance Air‐Stable 2D‐WSe2/P3HT Based Inorganic–Organic Hybrid Photodetector with Broadband Visible to Near‐IR Light Detection

Contact Info

Product

Resources

About

Ultra-Low Noise and Self-Powered β-Ga₂O₃ Deep Ultraviolet Photodetector Array with Large Linear Dynamic Range

Ultra-Low Noise and Self-Powered β-Ga₂O₃ Deep Ultraviolet Photodetector Array with Large Linear Dynamic Range

High‐Performance Air‐Stable 2D‐WSe₂/P3HT Based Inorganic–Organic Hybrid Photodetector with Broadband Visible to Near‐IR Light Detection