Behaviour of copper atoms in annealed Cu/SiOx/Si systems

Benouattas, N.; Mosser, A.; Raiser, D.; Faerber, J.; Bouabellou, A.

doi:10.1016/s0169-4332(99)00366-9

Cited by 44 publications

(38 citation statements)

References 15 publications

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“…In contrast to Cu grid coated with α-C film, no Cu particles are formed when Cu-grid is coated by SiO film. It seems that the mobility of Cu on SiO film is suppressed dramatically due to the strong reaction of Cu with SiO film [18], which results in the formation of Cu-rich silicides as shown in Cu/SiO/Si system [18]. At elevated temperature, Cu oxide can also be formed [19][20] as demonstrated in deficient γ-Al 2 O 3 substrate [21].…”

Section: Discussionmentioning

confidence: 99%

Behaviour of TEM metal grids during in-situ heating experiments

Zhang

2009

Ultramicroscopy

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The stability of Ni, Cu, Mo and Au TEM grids coated with ultra-thin amorphous carbon or silicon monoxide film is examined by in-situ heating up to a temperature in the range 500~850°C in a transmission electron microscope. It is demonstrated that some grids can generate nano-particles either due to the surface diffusion of metal atoms on amorphous film or due to metal evaporation/redeposition. The emergence of nano-particles can complicate experimental observations, particularly in in-situ heating studies of dynamic behaviours of nanomaterials in TEM. The most widely used Cu grid covered with amorphous carbon is unstable, and numerous Cu nano-particles start to form once heating temperature reaches 600°C. In the case of Ni grid covered with α-C film, a large number of Ni nano-crystals occur immediately when the temperature approaches to 600 °C, accompanied by the graphitization of amorphous carbon. In contrast, both Mo and Au grids covered with α-C film exhibit good stability at elevated temperature, for instance, up to 680°C and 850°C for Mo and Au, respectively, and no any metal nano-particles are detected. Cu grid covered Si monoxide thin film is stable up to 550 °C, but Si nano-crystals appear under intensive electron beam. The generated nano-particles are well characterized by spectroscopic techniques (EDXS/EELS) and high-resolution TEM. The mechanism of nano-particle formation is addressed based on the interactions between the metal grid and the amorphous carbon film and on the sublimation of metal.

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Section: Discussionmentioning

confidence: 99%

Behaviour of TEM metal grids during in-situ heating experiments

Zhang

2009

Ultramicroscopy

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“…These twin boundaries in the pure Cu films may provide the channel for diffusion. 29,30 The interdiffusion event is readily achieved in the presence of twins during annealing. The addition of a small amount (2.0 at.%) of Mo in pure Cu film does not reveal the presence of any twins.…”

Section: Diffusion Processmentioning

confidence: 99%

Sputtered copper films with insoluble Mo for Cu metallization: A thermal annealing study

Lin

Chu

Mahalingam

et al. 2003

Journal of Elec Materi

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The thermal annealing behavior of Cu films containing insoluble 2.0 at.% Mo magnetron co-sputtered on Si substrates is discussed in the present study. The Cu-Mo films were vacuum annealed at temperatures ranging from 200°C to 800°C. X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations have shown that Cu 4 Si was formed at 530°C, whereas pure Cu film exhibited Cu 4 Si growth at 400°C. Twins are observed in focused ion beam (FIB) images of as-deposited and 400°C annealed, pure Cu film, and these twins result from the intrinsically low stacking-fault energy. Twins appearing in pure Cu film may offer an extra diffusion channel during annealing for copper silicide formation. In Cu-Mo films, the shallow diffusion profiles for Cu into Si were observed through secondary ion mass spectroscopy (SIMS) analysis. Higher activation energy obtained through differential scanning calorimetry (DSC) analysis for the formation of copper silicide further confirms the beneficial effect of Mo on the thermal stability of Cu film.

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“…Several copper (I) and copper (II) precursors were commonly used in the past, such as CuCl 4,6 2 contains fluorine which reduces the Cu adhesion on the substrate. They all have very low reactivity with low growth rate, so that either high temperature (> 200 o C), which is not well suited for smooth Cu growth due to Cu agglomeration and diffusion [13][14][15] , or plasma is needed to enhance the reactivity.…”

Section: Introductionmentioning

confidence: 99%