Beyond CMOS

Das, Shamik; Chen, An; Marinella, M. J.

doi:10.1109/irds54852.2021.00011

Cited by 7 publications

(5 citation statements)

References 897 publications

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“…Efficient current-driven DW motion combined with the nonvolatility lends itself to low-power computing applications. Moreover, the collective behavior of magnetization allows for the implementation of compact logic gates, such as majority or minority gates, providing more functionality in single devices [ 1 ].…”

Section: Emerging Logic Functionalities In Dw Devicesmentioning

confidence: 99%

“…For decades, the information processing industry has been driven by the dimensional scaling of Complementary Metal-Oxide-Semiconductor (CMOS) technology, enhancing the speed and power efficiency of transistors. However, maintaining a constant power density while further reducing the size of the transistor presents significant challenges, primarily due to leakage currents and the large number of interconnects [ 1 ]. As CMOS scaling approaches fundamental limits, new devices and architectures are being explored to prolong the scaling trend of integrated circuits for high-speed, low-power, and high-density technologies.…”

Section: Introductionmentioning

confidence: 99%

“…As CMOS scaling approaches fundamental limits, new devices and architectures are being explored to prolong the scaling trend of integrated circuits for high-speed, low-power, and high-density technologies. This includes extending the functionality of the CMOS platform via the integration of new technologies (“More Moore”) and stimulating new information processing paradigms (“Beyond CMOS”) [ 1 ].…”

Section: Introductionmentioning

confidence: 99%

“…Importantly, by integrating multiple functions into a single device, such as nonvolatile majority gates, DW logic enables functional scaling. This capability holds promise for building compact logic gates and simplifying logic circuit complexity [ 1 ]. The nonvolatility also allows combining logic and memory for in-memory computing architectures [ 32 ].…”

Section: Introductionmentioning

confidence: 99%

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Progress in Spin Logic Devices Based on Domain-Wall Motion

Vermeulen,

Sorée,

Couet

et al. 2024

Micromachines

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Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic concepts are also extensively explored. Among these, spin logic devices based on the motion of magnetic domain walls (DWs) enable the implementation of compact and energy-efficient logic circuits. In these devices, DW motion within a magnetic track enables spin information processing, while MTJs at the input and output serve as electrical writing and reading elements. DW logic holds promise for simplifying logic circuit complexity by performing multiple functions within a single device. Nevertheless, the demonstration of DW logic circuits with electrical writing and reading at the nanoscale is still needed to unveil their practical application potential. In this review, we discuss material advancements for high-speed DW motion, progress in DW logic devices, groundbreaking demonstrations of current-driven DW logic, and its potential for practical applications. Additionally, we discuss alternative approaches for current-free information propagation, along with challenges and prospects for the development of DW logic.

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Section: Emerging Logic Functionalities In Dw Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Progress in Spin Logic Devices Based on Domain-Wall Motion

Vermeulen,

Sorée,

Couet

et al. 2024

Micromachines

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“…Exponential scaling of the switching channel in CMOS devices, followed by Moore’s law, is one of the key enablers for the advancement . However, CMOS scaling is approaching fundamental physical limits, which has necessitated the need to look for alternative switching devices to continue improving computational performance. − An ionic-based resistive switching device (i.e., a memristor) is a leading candidate in this context. − Due to its programmable analog memory effect, which resembles the function of biological synapses in the human brain, memristors have been regarded as a building block of neuromorphic (i.e., brain-like) electronics. This technology has the potential not only to provide biomimetic devices that support human-like data processing but also for influencing even the most basic forms of electronics (Figure ).…”

Section: Introductionmentioning

confidence: 99%

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

et al. 2023

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Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in memristive technology, including memristive devices, theory, algorithms, architectures, and systems. In addition, we discuss research directions for various applications of memristive technology including hardware accelerators for artificial intelligence, in-sensor computing, and probabilistic computing. Finally, we provide a forward-looking perspective on the future of memristive technology, outlining the challenges and opportunities for further research and innovation in this field. By providing an up-to-date overview of the state-of-the-art in memristive technology, this review aims to inform and inspire further research in this field.

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Wide-range thermal conductivity modulation based on protonated nickelate perovskite oxides

Li,

Bian,

Yoshimura

et al. 2024

Applied Physics Letters

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The perovskite oxides ReNiO3 (Re = rare-earth elements) are promising functional materials due to their strongly correlated electrons. Except for the well-known intrinsic metal-insulating transition in these materials, recent progresses have proved that protonation of ReNiO3 can bring about interesting Mott transition in this series. To date, in these protonated species (H-ReNiO3), huge resistance switching, fast ionic diffusion, and their applications as an iontronic transistor, memristor, and fuel cell are reported. In this work, the thermal conductivities of H-ReNiO3 (Re = La, Nd, Sm, and Eu) epitaxial thin films are investigated. The protonation-induced Mott transition can effectively modulate the electronic thermal conductivity while the lattice thermal conductance is less affected. Hence, at room temperature, the metallic LaNiO3 and NdNiO3 exhibit reversible wide thermal conductivity modulation, in ranges of 2.6–12.0 and 1.6–8.0 W m−1 K−1, respectively. These values are much larger than other thermal regulation materials based on transition metal oxides. Thus, our work reveals the great potential of ReNiO3 being applied as a thermal-regulating material. The fast ionic diffusion in H-ReNiO3 also guarantees that a fast response and wide-range thermal transistor can be realized by H-LaNiO3 and H-NdNiO3 in the future.

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Beyond CMOS

Cited by 7 publications

References 897 publications

Progress in Spin Logic Devices Based on Domain-Wall Motion

Progress in Spin Logic Devices Based on Domain-Wall Motion

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Wide-range thermal conductivity modulation based on protonated nickelate perovskite oxides

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