Bi nanostructures obtained on Si substrates by thermal evaporation method

Abstract

Bi low dimensional structures were obtained on the Si(100) substrates by thermal evaporation method in Ar. Bi nanocrystals and nanowires were condensed on the Si substrates at 10–20 s deposition time. Computer processing of SEM-images was used to determine the sizes of Bi nanocrystals and microcrystals and their distribution densities. The distribution density of nanocrystals was larger than its the microcrystals by a factor of 85–260. The increase of deposition time up to 20 s reduced the nanocrystal density by a factor of 2 with the increase of their sizes. X-ray diffraction analysis revealed oxide layers on the Bi nanocrystals and the Si substrates. The decrease in the sizes of the Bi nanocrystals and the increase in their density on the Si substrates in comparison with those on glassy carbon substrates were observed.