Bias Dependant Noise Wave Modelling Procedure of Microwave Fets

Abstract

A new noise modelling procedure of microwave field-effect transistors (FETs) valid for various bias conditions is suggested in this paper. The proposed procedure is based on transistor noise wave model. With the aim to improve the noise wave model accuracy, the modification of the model is done by inclusion of the error correction functions into the noise wave model equations. It leads to significant reduction of deviations between measured and simulated noise parameters and therefore better noise prediction is achieved. It is also shown that once determined error correction functions can be applied for accurate noise modelling of the same device for various bias conditions. The validity of the presented noise modelling approach is exemplified by modelling of a specific MESFET device in packaged form.