Binding energy and self-polarization as function of energy density in GaAs/AlAs quantum well wires

Self‐Polarization of Hydrogenic Impurity in Quantum Wells Made of Different Materials

“…[20][21][22][23] Under these external effects, it is possible to find many studies in which binding energy (E b ) and self-polarization (SP/e) calculations are made for the confinement electron, especially in QW1-doped semiconductors. [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43] Recently, the SP/e, which is defined as the influence of the well potential on the impurity atom has been studied for QW1 as a function of well width, external electric field, and the impurity position. In our previous studies, we have studied SP/e in QW1 under the laser field.…”

Influence of noise-binding energy interplay on the second and third-order nonlinear optical properties of impurity doped quantum dots

“…LDSS possess special status for displaying enhanced NLO properties. Thus, the modulation of NLO properties of LDSS by impurity is quite interesting and accentuates rigorous research works [1], [2], [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13], [14], [15], [16], [17], [18], [19], [20], [21], [22], [23], [24], [25], [26], [27], [28], [29], [30], [31], [32], [33], [34], [35], [36].…”

Simultaneous effects of hydrostatic pressure and applied electric field on the impurity-related self-polarization in GaAs/Ga1−xAlxAs multiple quantum wells

“…Erdogan et al found that the self-polarization of impurities in cylindrical QWW has a great dependence on the applied electric and magnetic fields [10,11], whereas in a square QWW, the self-polarization depends strongly on the axial component of the electric field [12]. It is found that the hydrostatic pressure tends to decrease the selfpolarization, but the hydrostatic pressure effects are strongly influenced by the impurity position and the applied electric field [13].…”