Bio-inspired Artificial synapse for neuromorphic computing based on NiO nanoparticle thin film

Abstract

The unprecedented need for data processing in the modern technological era has created opportunities in neuromorphic devices and computation. This is primarily due to the extensive parallel processing done in our human brain. Data processing and logical decision-making at the same physical location is an exciting aspects of neuromorphic computation. For this, establishing reliable resistive switching devices working at room temperature with ease of fabrication is important. Here, a reliable analog resistive switching device based on Au/NiO nanoparticles/Au nanoparticles is discussed. The application of positive and negative voltage pulses of constant amplitude results in enhancement and reduction of synaptic current, which is consistent with potentiation and depression, respectively. The change in the conductance resulting in such a process can be fitted well with double exponential growth and decay, respectively. Consistent potentiation and depression characteristics reveal that non-ideal voltage pulses can result in a linear dependence of potentiation and depression with electric pulses. Long-term potentiation (LTP) and Long-term depression (LTD) characteristics have been established, which are essential for mimicking the biological synaptic applications. The NiO nanoparticle-based devices can also be used for controlled synaptic enhancement by optimizing the electric pulses, displaying typical learning-forgetting-relearning characteristics.

Spike rate dependent synaptic characteristics in lamellar, multilayered alpha-MoO3 based two-terminal devices – efficient way to control the synaptic amplification

“…A similar trend of time constants were also determined elsewhere. 64,65 To check the reliability of the potentiation and depression, we performed the measurements for multiple cycles with multiple pulse voltages. Fig.…”

“…In the case of a biological synapse, repeated learning will enhance the memory retention with progressive increase in the memory after a forgetting process. 65…”