2018
DOI: 10.1002/smll.201803970
|View full text |Cite
|
Sign up to set email alerts
|

Biodegradable Natural Pectin‐Based Flexible Multilevel Resistive Switching Memory for Transient Electronics

Abstract: above advantage. [9,10] Resistive switching (RS) memories are highly promising candidates for next-generation nonvolatile memories owing to their high storage density, fast switching speed, and low power consumption. [11][12][13][14][15] Recently, some biomaterials have also been explored as an attractive building blocks for RS memories, such as pectin, [16] protein, [17] and chitosan, [18] etc. Among these materials, pectin holds the advantages of good solubility and fast metal ions transport. 1) For pectin, … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

3
96
0

Year Published

2019
2019
2021
2021

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 117 publications
(99 citation statements)
references
References 53 publications
3
96
0
Order By: Relevance
“…Digital‐type memristors (which is also termed as resistive random access memory) operate with reversible RS behavior between multiple discrete states. The inherent memory effect of this type memristors can be developed as nonvolatile memory for information storage, where the stored information is represented by different resistance states (such as a high resistance state (HRS) and a low resistance state (LRS)) . To be applied as next‐generation memory, SET/RESET voltages ( V SET / V RESET ), HRS/LRS ratio, endurance, retention, and power consumption are critical characteristics.…”
Section: Memristorsmentioning
confidence: 99%
See 2 more Smart Citations
“…Digital‐type memristors (which is also termed as resistive random access memory) operate with reversible RS behavior between multiple discrete states. The inherent memory effect of this type memristors can be developed as nonvolatile memory for information storage, where the stored information is represented by different resistance states (such as a high resistance state (HRS) and a low resistance state (LRS)) . To be applied as next‐generation memory, SET/RESET voltages ( V SET / V RESET ), HRS/LRS ratio, endurance, retention, and power consumption are critical characteristics.…”
Section: Memristorsmentioning
confidence: 99%
“…The inherent memory effect of this type memristors can be developed as nonvolatile memory for information storage, where the stored information is represented by different resistance states (such as a high resistance state (HRS) and a low resistance state (LRS)). [64][65][66][67][68] To be applied as next-generation memory, SET/RESET voltages (V SET /V RESET ), HRS/LRS ratio, endurance, retention, and power consumption are critical characteristics. At present, some companies have started to promote the production of RRAM products.…”
Section: Memristorsmentioning
confidence: 99%
See 1 more Smart Citation
“…They provide these devices with environmental benignity, high performance and large-scale fabrication capability at low cost. The nature of biomaterials paves the way for next-generation ultrahigh density and high-speed green data storage devices [8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…5 Polymers (e.g., silk broin, 10 poly(lactic-co-glycolic acid) (PLGA), 11 poly(vinyl alcohol) (PVA), 12 poly(caprolactone) (PCL), 13 polyvinylpyrrolidone (PVP), 14 etc. ), water-soluble sodium carboxymethyl cellulose (Na-CMC) 15 and natural materials [16][17][18] (e.g., egg albumen, natural pectin, natural wax) have been reported to serve as substrates or encapsulation layers of transient electronics. Even some dielectric materials such as SiO 2 and Si 3 N 4 can be used for encapsulation.…”
Section: Introductionmentioning
confidence: 99%