Bipolar resistive switching and its temperature dependence in the composite structure of BiFeO3 bilayer

Co-Al layered double hydroxides (LDHs) thin films were prepared by drop-casting process on ITO coated glass substrates. And then the small molecule atrazine was adsorbed on the Co-Al LDHs film by impregnation method. Current-voltage characteristics revealed nonvolatile resistive switching in Co-Al LDHs adsorbed atrazine films. The Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co-Al LDHs Film has been investigated. By varying the atrazine adsorbed content in Co-Al LDHs thin films, the nonvolatile resistive switching behavior of device could be adjusted in a controlled way. Entirely different nonvolatile resistive switching characteristic, such as write-once read-many-times memory effect and rewritable memory effect are discriminable by the current-voltage curves.

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Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co–Al layered double hydroxide films

Sun

Shi

2021

J Mater Sci: Mater Electron

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Effects of sol aging on resistive switching behaviors of HfOx resistive memories

Hsu

Sun

Tsao

et al. 2017

Physica B: Condensed Matter

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Thermal stability of resistive switching effect in ZnO/BiFeO3 bilayer structure

et al. 2019

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Superior thermal stability of resistive switching performance is essential for resistive random access memory (R-RAM) device with high reliability. Thermal stable resistive switching performance can be achieved in ZnO/BiFeO3 bilayer structure by modifying the interface. The bilayer structure with a distinct interface is fabricated with an optimized annealing process in chemical solution deposition method. This bilayer structure shows a better thermal stability compared to the case with an indistinct interface. Attempt has been made to explain such effects based on conductive filament mechanism. We propose that the confinement of the oxygen vacancies migration at distinct interface could be the reason for the thermal stability. Our results indicate that morphology of interface is an important factor to improve the thermal stability of R-RAM.

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Bipolar resistive switching and its temperature dependence in the composite structure of BiFeO3 bilayer

Cited by 4 publications

References 23 publications

Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co–Al layered double hydroxide films

Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co–Al layered double hydroxide films

Effects of sol aging on resistive switching behaviors of HfOx resistive memories

Thermal stability of resistive switching effect in ZnO/BiFeO3 bilayer structure

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