Bipolar Resistive Switching in Epitaxial Mn ₃ O ₄ Thin Films on Nb-Doped SrTiO ₃ Substrates

Abstract

Spinel (001)-orientated Mn3O4 thin films on Nb-doped SrTiO3 (001) substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial film is well crystallized. In the film plane the orientation relationship between the film and the substrate is [100]Mn3O4‖[110] Nb-doped SrTiO3. After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. The switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching behavior is of filament type. Due to the performance reproducibility and state stability, Mn3O4 might be a promising candidate for the resistive random access memory devices.

A novel monoclinic phase and electrically tunable magnetism of van derWaals layered magnet CrTe2

“…[1,2] Enormous efforts have been devoted to the fabrication of the various systems and many magnetic materials have been reported, such as CrI 3 , [3] Fe 3 GeTe 2 , [4,5] Cr 3 Te 4 , [6] CrBr 3 , [7] and Cr 2 Ge 2 Te 6 . [8] One of the merits that exploring the vdW layered magnetic system is that the magnetism can normally be tuned by customizing the stacking and doping of the system [9][10][11] or exerting optical method [12][13][14][15] as well as strain engineering, [16][17][18] which are extremely important for the efficient switching in building the magnetic memory devices. Although versatile methodologies have been explored, [19] the delicate tuning of the lattice structure to realize the dramatic change in the magnetism of the vdW layered system is still scarce.…”

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

“…Resistive switching (RS) has aroused lots of interest for its potential applications in the resistive random access memory devices. [1] The resistive switching phenomenon has been widely observed in the structures based on transition metal oxides, such as TiN/ZnO/Pt, [2] Cu/HfO 2 /Pt, [3] TiN/HfO x /ITO, [4] Pt/TiO 2 /Pt, [5] Ag/ZnO/Pt, [6] Ti/CeO 2 /Pt, [7] Pt/Mn 3 O 4 /Nb:SrTiO 3 , [8] Cu/SiO x /Al, [9] and Ti/ZrO 2 /Pt. [10] The main stream of RS materials is metal oxide.…”