2022
DOI: 10.1016/j.jsamd.2022.100447
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Bismuth telluride based efficient thermoelectric power generator with electrically conducive interfaces for harvesting low-temperature heat

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Cited by 4 publications
(1 citation statement)
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“…Bi 2 (Te,Se) 3 compounds possess excellent thermal stability until ∼573 K. 43 Bi 1.5 Sb 0.5 Te 3 − Bi 2 Te 2.7 Se 0.3 devices with similar contact layers reported longterm thermal stability until 573 K hot-side temperature. 44 From the thermal profile projection at ΔT ≈ 313 K, the optimum segment length ratio should be ∼0.51, which restricts T i ≈ 573 K. In our experimental work, the actual length ratio was 0.49 (considering the interface layers), which leads to T i ≈ 572 K at ΔT ≈ 313 K, and this interface temperature T i is within the stability range of Bi 2 Te 2.7 Se 0.3 . A segment length ratio beyond the stability range can lead to failure of the TEG element during long-term service.…”
Section: Predictions Of Interfacementioning
confidence: 99%
“…Bi 2 (Te,Se) 3 compounds possess excellent thermal stability until ∼573 K. 43 Bi 1.5 Sb 0.5 Te 3 − Bi 2 Te 2.7 Se 0.3 devices with similar contact layers reported longterm thermal stability until 573 K hot-side temperature. 44 From the thermal profile projection at ΔT ≈ 313 K, the optimum segment length ratio should be ∼0.51, which restricts T i ≈ 573 K. In our experimental work, the actual length ratio was 0.49 (considering the interface layers), which leads to T i ≈ 572 K at ΔT ≈ 313 K, and this interface temperature T i is within the stability range of Bi 2 Te 2.7 Se 0.3 . A segment length ratio beyond the stability range can lead to failure of the TEG element during long-term service.…”
Section: Predictions Of Interfacementioning
confidence: 99%