Bistable electrical switching and nonvolatile memory effect based on the thin films of polyurethane-carbon nanotubes blends

Sun, Yanmei; Miao, Fengjuan; Li, Rui

doi:10.1016/j.sna.2015.09.016

Cited by 12 publications

(4 citation statements)

References 26 publications

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“…When the Al electrode is negatively biased, the electrons from the Al electrode and those in the active layer both fill the charge trapping centre and are trapped by the MWCNTs. The electrons under low bias voltage do not have enough energy/mobility to escape from the trapping centre [ 47 ]. The trapping centre is the electron trap centre, that is, the oxygen vacancy [ 48 ].…”

Section: Resultsmentioning

confidence: 99%

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

2021

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In this paper, a tuneable multilevel data storage bioresistive memory device is prepared from a composite of multiwalled carbon nanotubes (MWCNTs) and egg albumen (EA). By changing the concentration of MWCNTs incorporated into the egg albumen film, the switching current ratio of aluminium/egg albumen:multiwalled carbon nanotubes/indium tin oxide (Al/EA:MWCNT/ITO) for resistive random access memory increases as the concentration of MWCNTs decreases. The device can achieve continuous bipolar switching that is repeated 100 times per cell with stable resistance for 104 s and a clear storage window under 2.5 × 104 continuous pulses. Changing the current limit of the device to obtain low-state resistance values of different states achieves multivalue storage. The mechanism of conduction can be explained by the oxygen vacancies and the smaller number of iron atoms that are working together to form and fracture conductive filaments. The device is nonvolatile and stable for use in rewritable memory due to the adjustable switch ratio, adjustable voltage, and nanometre size, and it can be integrated into circuits with different power consumption requirements. Therefore, it has broad application prospects in the fields of data storage and neural networks.

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Section: Resultsmentioning

confidence: 99%

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

2021

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“…In addition, carbon nanotubes (CNTs) are widely applicable carbon-based nanomaterials with extraordinary physicochemical properties, such as low-temperature processability, transparency, elasticity, and high mobility [ 15 , 16 , 17 , 18 ]. Significantly, drop-casting-based solution processes enable the formation of highly uniform CNT random networks and, because of their high aspect ratio, strong mechanical strength, and high modulus, CNTs represent useful polymer supplements [ 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Chitosan-Based Flexible Memristors with Embedded Carbon Nanotubes for Neuromorphic Electronics

Min

Cho

2021

Micromachines

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In this study, we propose high-performance chitosan-based flexible memristors with embedded single-walled carbon nanotubes (SWCNTs) for neuromorphic electronics. These flexible transparent memristors were applied to a polyethylene naphthalate (PEN) substrate using low-temperature solution processing. The chitosan-based flexible memristors have a bipolar resistive switching (BRS) behavior due to the cation-based electrochemical reaction between a polymeric chitosan electrolyte and mobile ions. The effect of SWCNT addition on the BRS characteristics was analyzed. It was observed that the embedded SWCNTs absorb more metal ions and trigger the conductive filament in the chitosan electrolyte, resulting in a more stable and wider BRS window compared to the device with no SWCNTs. The memory window of the chitosan nanocomposite memristors with SWCNTs was 14.98, which was approximately double that of devices without SWCNTs (6.39). Furthermore, the proposed SWCNT-embedded chitosan-based memristors had memristive properties, such as short-term and long-term plasticity via paired-pulse facilitation and spike-timing-dependent plasticity, respectively. In addition, the conductivity modulation was evaluated with 300 synaptic pulses. These findings suggest that memristors featuring SWCNT-embedded chitosan are a promising building block for future artificial synaptic electronics applications.

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“…Zhao et al . reported rewritable composite-type memory based on polymethyl methacrylate-CNT layer 20 , and polyurethane-CNTs composite layer was introduced as a resistive layer by Li group 21 . Although the resistive devices based on charge trap- or filamentary-controlled switching mechanism exhibited notable resistive switching performance with good mechanical flexibility, the nanocomposite-based ReRAM device has a potential problem which is reproducibility in cell-to-cell and device-to-device because randomly distributed and aggregated fillers can still be observed in the matrix.…”

Section: Introductionmentioning

confidence: 99%

Sustainable resistance switching performance from composite-type ReRAM device based on carbon Nanotube@Titania core–shell wires

Kim

Hwang

et al. 2020

Sci Rep

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A novel nanocomposite-based non-volatile resistance switching random access memory device introducing single-walled carbon nanotube (SWCNT)@TiO2 core–shell wires was proposed for flexible electronics. The SWCNT was de-bundled by ultrasonication with sodium dodecylbenzene sulfonate (SDBS), and then the TiO2 skin layer on the SWCNT surface was successfully introduced by adding benzyl alcohol as a weak surfactant. The nanocomposite resistance switching layer was composed of the SWCNT@TiO2 core–shell wires and poly(vinyl alcohol) (PVA) matrix by a simple spin-coating method. The device exhibited reproducible resistance switching performance with a remarkably narrow distribution of operating parameters (VSET and VRESET were 2.63 ± 0.16 and 0.95 ± 0.11 V, respectively) with a large RON/ROFF ratio of 105 for 200 consecutive switching cycles. Furthermore, the excellent resistance switching behavior in our device was maintained against mechanical stress up to 105 bending test. We believe that the nanocomposite memory device with SWCNT@TiO2 core–shell wires would be a critical asset to realize practical application for a flexible non-volatile memory field.

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Bistable electrical switching and nonvolatile memory effect based on the thin films of polyurethane-carbon nanotubes blends

Cited by 12 publications

References 26 publications

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

Chitosan-Based Flexible Memristors with Embedded Carbon Nanotubes for Neuromorphic Electronics

Sustainable resistance switching performance from composite-type ReRAM device based on carbon Nanotube@Titania core–shell wires

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