Black Silicon Photovoltaics

Füchsel, Kevin; Kröll, Matthias; Otto, Martin; Steglich, Mathias; Bingel, Astrid; Käsebier, Thomas; Wehrspohn, Ralf B.; Kley, Ernst‐Bernhard; Pertsch, Thomas; Tünnermann, Andreas

doi:10.1002/9783527665662.ch5

Cited by 6 publications

(4 citation statements)

References 118 publications

(132 reference statements)

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“…bSi suffers from higher surface recombination given the increased surface area and the subsurface damage originated by the texturing process (the latter when fabricated by reactive ion etch -RIE) [24], leading to losses in terms of open circuit voltage and fill factor. However, the gap between efficiency of bSi based cells and that of conventionally textured cells under same fabrication conditions is progressively closing [16], and the best passivation of bSi has been achieved so far by ALD coating with Al2O3 [25].…”

Section: Introductionmentioning

confidence: 99%

Avoiding blistering in Al2O3 deposited on planar and black Si

Iandolo

Davidsen

Hansen

2018

Solar Energy Materials and Solar Cells

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Section: Introductionmentioning

confidence: 99%

Avoiding blistering in Al2O3 deposited on planar and black Si

Iandolo

Davidsen

Hansen

2018

Solar Energy Materials and Solar Cells

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“…According to Füchsel et al [9], all randomly arranged nanostructures with an aspect ratio larger than 1 can be named lack silicon . In this study, we designate b-Si as structures of stochastic, needle-like cones fabricated by a reactive ion etching process [8].…”

Section: Modeling Of the B-si Nanostructurementioning

confidence: 99%

1.5 - Optical modeling of Ge-on-Si focal plane arrays with diffractive light coupling

Schmelz¹,

Steglich²,

Zeitner³

et al. 2017

Proceedings IRS² 2017

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Coupling light via stochastic needle-like nanostructures (black silicon) on the back side of a Ge-on-Si photodiode provides an increase of light absorption (and thus of the quantum efficiency) while preserving the f 3dB -bandwidth of the diode [1,2]. When transferring this technique from a single photodiode to array-like devices such as focal plane arrays (FPAs), it comes to optical crosstalk in adjacent pixels.A simulation model based on the ray tracing program Zemax can determine the absorption in Ge-on-Si FPAs under arbitrary illumination. It simulates the absorption in every individual pixel and thus enables the calculation of optical crosstalk, as well as the total absorption, as functions of different design parameters. It gives the opportunity to compile parameter surveys or to perform a design optimization of the array device. The simulation model can be easily adapted to similar applications, thus providing a wide range of usage.

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“…In the last decades several antireflective coatings, scattering layers and photon recycling structures have been developed to enhance photovoltaic performances in devices based on inorganic semiconductors, [1][2][3] donor-acceptor organic [4] and hybrid [5,6] systems, perovskites [7], and for light transmitting panels based on luminescent solar concentrators [8]. Photon absorption can also be enhanced using scattering and light trapping surfaces [9][10][11][12] or photonic crystals [13][14][15] that aim to increase the light optical path, to confine light in the active layer, or to recycle emitted photons [16].…”

Section: Introductionmentioning

confidence: 99%

Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling

Lova

Soci

2020

Micromachines

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Thanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to further enhance photon absorption of GaAs and improve photovoltaic performance. To this end, metal-assisted chemical etching represents a simple, low-cost, and easy to scale-up microstructuring method, particularly when compared to dry etching methods. In this work, we show that the etched GaAs (black GaAs) has exceptional light trapping properties inducing a 120 times lower surface reflectance than that of polished GaAs and that the structured surface favors photon recycling. As a proof of principle, we investigate photon reabsorption in hybrid GaAs:poly (3-hexylthiophene) heterointerfaces.

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Black Silicon Photovoltaics

Cited by 6 publications

References 118 publications

Avoiding blistering in Al2O3 deposited on planar and black Si

Avoiding blistering in Al2O3 deposited on planar and black Si

1.5 - Optical modeling of Ge-on-Si focal plane arrays with diffractive light coupling

Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling

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