Block Copolymer with an Extremely High Block-to-Block Interaction for a Significant Reduction of Line-Edge Fluctuations in Self-Assembled Patterns

Kim, Jong Min; Hur, Yoon Hyung; Jeong, Jae Won; Nam, Tae Won; Lee, Jung Hye; Jeon, Kiung; Kim, YongJoo; Jung, Yeon Sik

doi:10.1021/acs.chemmater.6b01731

Cited by 32 publications

(30 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Accurate characterization of the interfacial width is important for lithographic materials as it is potentially a limiting factor in the performance of a BCP as an etch mask. 51 Polystyrene- b -poly(methyl methacrylate) (PS- b -PMMA) is the most commonly explored material for lithographic applications, but it suffers from a number of limitations. Recent results have shown that while the material will form regular patterns down to L 0 ≅ 18 nm, the pattern will not effectively transfer to the underlying substrate at that length scale.…”

Section: Introductionmentioning

confidence: 99%

Characterizing the Interface Scaling of High χ Block Copolymers near the Order–Disorder Transition

et al. 2017

View full text Add to dashboard Cite

Advancements in the directed self-assembly of block copolymers (BCPs) have prompted the development of new materials with larger effective interaction parameters (). This enables BCP systems with phase separation at increasingly small degrees of polymerization (). Very often these systems reside near the order-disorder transition and fit between the weak and strong segregation limits where the behavior of BCP systems is not as thoroughly understood. Utilizing resonant soft X-ray reflectivity (RSoXR) enables both the BCP pitch () and interface width () to be determined simultaneously, through a direct characterization of the composition profile of BCP lamellae oriented parallel to a substrate. A series of high BCPs with ranging from ≈0.04 to 0.25 and from 19 to 70 have been investigated. The/ ratio serves as an important metric for the feasibility of a material for nanopatterning applications; the results of the RSoXR measurement are used to establish a relationship between and/. The results of this analysis are correlated with experimentally established limits for the functionality of BCPs in nanopatterning applications. These results also provide guidance for the magnitude of needed to achieve small interface width for samples with sub-10 nm.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterizing the Interface Scaling of High χ Block Copolymers near the Order–Disorder Transition

et al. 2017

View full text Add to dashboard Cite

show abstract

“…124–128 More recently, structuralizing nanomaterials based on a template have been actively researched to make precisely arranged structure with high throughput and cost effectiveness. A template is utilized to guide the material to the predefined form of the template to make nanomaterial structures with high resolution over a large area by applying simple processes, such as deposition or synthesis 5,64–76. In addition, the template‐based method is easy to combine with a transfer method, enabling the structuralization of nanomaterials on flexible and stretchable substrates 129,130.…”

Section: Fabrication Of Geometrically Structured Nanomaterialsmentioning

confidence: 99%

“…In addition, the template‐based method is easy to combine with a transfer method, enabling the structuralization of nanomaterials on flexible and stretchable substrates 129,130. A method to use BCP is an efficient technique to make various nanostructures, such as cylindrical, lamellar, and spherical morphologies, by self‐assembly based on chemically different interaction of two bonded BCPs on a prepatterned template substrate 64,65,67,69,70. The pattern size, shape, and density can be adjusted by variation of the composition and weight of the BCP, and tens of nanoscale patterns can also be produced 131,132.…”

Section: Fabrication Of Geometrically Structured Nanomaterialsmentioning

confidence: 99%

“…The great interest in and demand for these nanomaterials have led to the development of diverse fabrication processes to produce them 54–63. Conventionally, nanomaterials have been synthesized based on bottom‐up processes, but more recently, there has been huge interest in advanced fabrication processes, including top‐down fabrication and hybrid fabrication combining bottom‐up and top‐down approaches to achieve high throughput and cost‐effectiveness, eventually finding a way to the industrialization of nanomaterials 5,64–76…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Geometrically Structured Nanomaterials for Nanosensors, NEMS, and Nanosieves

Seo

Yoo

et al. 2020

Advanced Materials

View full text Add to dashboard Cite

Recently, geometrically structured nanomaterials have received great attention due to their unique physical and chemical properties, which originate from the geometric variation in such materials. Indeed, the use of various geometrically structured nanomaterials has been actively reported in enhanced‐performance devices in a wide range of applications. Recent significant progress in the development of geometrically structured nanomaterials and associated devices is summarized. First, a brief introduction of advanced nanofabrication methods that enable the fabrication of various geometrically structured nanomaterials is given, and then the performance enhancements achieved in devices utilizing these nanomaterials, namely, i) physical and gas nanosensors, ii) nanoelectromechanical devices, and iii) nanosieves are described. For the device applications, a systematic summary of their structures, working mechanisms, fabrication methods, and output performance is provided. Particular focus is given to how device performance can be enhanced through the geometric structures of the nanomaterials. Finally, perspectives on the development of novel nanomaterial structures and associated devices are presented.

show abstract

“…Among them, PS‐ b ‐PDMS has been widely investigated for DSA application due to its high χ and high content of Si. [17a,b,21] Also, to overcome slow interdiffusion issue of high‐χ BCPs, various techniques such as warm solvent annealing,[17f,22] warm spin casting,[17e] flash light annealing, and microwave annealing were employed.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic and Kinetic Tuning of Block Copolymer Based on Random Copolymerization for High‐Quality Sub‐6 nm Pattern Formation

Hur

Song

Kim

et al. 2018

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

The precisely controllable self-assembly phenomenon of block copolymers (BCPs) has garnered much attention because it yields well-defined periodic nanostructures with a periodicity of 5-50 nm. However, from both thermodynamic and kinetic viewpoints, it still remains a challenge to develop a BCP material that can provide sub-10 nm resolution, high pattern quality, fast pattern formation, and sufficient etch selectivity. To address these challenges, this study reports a BCP system containing a random-copolymerized block (poly(2-vinylpyridine-co-4-vinylpyridne)-bpoly(dimethylsiloxane) (P(2VP-co-4VP)-b-PDMS)) that can provide sub-6 nm resolution, 3σ line edge roughness of 0.89 nm, sub-1-min assembly time, and a high etch selectivity over 10. Calculation of the Flory-Huggins interaction parameter (χ) based on Leibler's mean-field theory and smallangle X-ray scattering measurement data confirms the gradual tunability of χ with the controlled addition of 4VP fraction in the P(2VP-co-4VP) block. While guaranteeing kinetically fast self-assembly within one minute using microwave annealing, the best pattern quality resulting from the thermodynamic suppression of line edge fluctuation is achieved with a 4VP weight fraction of 33% in the random-copolymerized block. This approach enables systematical control of sub-6 nm scale BCP self-assembly and will provide a practical patterning solution for diverse nanostructures and devices.

show abstract

Block Copolymer with an Extremely High Block-to-Block Interaction for a Significant Reduction of Line-Edge Fluctuations in Self-Assembled Patterns

Cited by 32 publications

References 59 publications

Characterizing the Interface Scaling of High χ Block Copolymers near the Order–Disorder Transition

Characterizing the Interface Scaling of High χ Block Copolymers near the Order–Disorder Transition

Geometrically Structured Nanomaterials for Nanosensors, NEMS, and Nanosieves

Thermodynamic and Kinetic Tuning of Block Copolymer Based on Random Copolymerization for High‐Quality Sub‐6 nm Pattern Formation

Contact Info

Product

Resources

About