Blue-Green Light Emitting Diodes with New p-Contact Layers: ZnSe/BeTe

Abstract

Wcm 2 even without annealing when the ZnSe layer thickness is 5 nm. The composition of quaternary ZnMgBeSe was determined using a ZnBeSe/ ZnMgBeSe layer structure by PL and X-ray measurements. The p-type doping property was investigated for ZnMgBeSe with different compositions, and N a ±N d drastically decreases with increasing band gap energy the same as that of the ZnMgSSe:N system. The fabricated LEDs show a strong electroluminescence under dc bias at room temperature.