Blue-light emission at room temperature from Ar+-irradiated SrTiO3

Kan, Daisuke; Terashima, Takahito; Kanda, Ryoko; Masuno, Atsunobu; Tanaka, Kazunori; Chu, S. N. G.; Kan, Hirofumi; Ishizumi, Atsushi; Kanemitsu, Yoshihiko; Shimakawa, Yuichi; Takano, Mikio

doi:10.1038/nmat1498

Cited by 577 publications

(522 citation statements)

References 25 publications

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“…The activation energy for oxygen-vacancy diffusion is only 0.75 eV in STO, whereas it is 2.2 eV in LAO [45]. It is well known that self-doped STO grown in low oxygen pressures possesses a high density of oxygen vacancies and is highly conducting [47,48]. In contrast, the as-grown LAO layer does not have extended oxygen vacancies and remains insulating, which is the reason why the pristine state of the Pt/LAO/ STO junction shows a high resistance with tunneling characteristics [ Fig.…”

Section: Resultsmentioning

confidence: 99%

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Luo

Turner

et al. 2013

Phys. Rev. X

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Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt=LaAlO 3 =SrTiO 3 heterostructures, where the conducting layer near the LaAlO 3 =SrTiO 3 interface serves as the ''unconventional'' bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO 3 =SrTiO 3 interface and the creation of defect-induced gap states within the ultrathin LaAlO 3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

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Section: Resultsmentioning

confidence: 99%

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Luo

Turner

et al. 2013

Phys. Rev. X

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“…This so far has been implemented primarily using amorphous LaAlO3-or AlOx-hard masks [12][13][14][15] or Ar-ion beam irradiation 16 . These processes, generally, require additional care as the deposition of amorphous LAO or AlOx layers or the Ar-ion irradiation can by itself induce conductivity in STO, 7,17,18 leading to failure of the patterned devices. In contrast to the chemically active hard masks or irradiation, a chemically inert mask of manganites (which shows little redox reaction with STO 16 ) has also been applied to pattern oxide interfaces, particularly the 2DEG in a-LAO/STO system formed at room temperature 19 .…”

Section: Introductionmentioning

confidence: 99%

Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

Niu

Gan

Zhang

et al. 2017

Applied Physics Letters

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The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel γ-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1015 cm−2. Herein, we report on the patterning of 2DEG at the γ-Al2O3/SrTiO3 interface grown at 650 °C by pulsed laser deposition using a hard mask of LaMnO3. The patterned 2DEG exhibits a critical thickness of 2 unit cells of γ-Al2O3 for the occurrence of interface conductivity, similar to the unpatterned sample. However, its maximum carrier density is found to be approximately 3 × 1013 cm−2, much lower than that of the unpatterned sample (∼1015 cm−2). Remarkably, a high electron mobility of approximately 3600 cm2 V−1 s−1 was obtained at low temperatures for the patterned 2DEG at a carrier density of ∼7 × 1012 cm−2, which exhibits clear Shubnikov-de Haas quantum oscillations. The patterned high-mobility 2DEG at the γ-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devices.

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“…Those heterostructures show intriguing phenomena such as superconductivity, 1-3 high-mobility electron gas, 4 thermoelectricity, 5,6 and interface magnetism. 7 Furthermore, STO itself has shown interesting properties such as superconductivity, 8 blue-light emission, 9 photovoltaic effect, 10 and water photolysis. 11 Such functionalities would be improved through the better understanding of the electronic structure of STO.…”

Section: Introductionmentioning

confidence: 99%

Structure and correlation effects in semiconductingSrTiO3

et al. 2010

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We have investigated the effects of structure change and electron correlation on SrTiO 3 single crystals using angle-resolved photoemission spectroscopy. We show that the cubic to tetragonal phase transition at 105 K is manifested by a charge transfer from in-plane ͑d yz and d zx ͒ bands to out-of-plane ͑d xy ͒ band, which is opposite to the theoretical predictions. Along this second-order phase transition, we find a smooth evolution of the quasiparticle strength and effective masses. The in-plane band exhibits a peak-dip-hump lineshape, indicating a high degree of correlation on a relatively large ͑170 meV͒ energy scale, which is attributed to the polaron formation.

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Blue-light emission at room temperature from Ar+-irradiated SrTiO3

Cited by 577 publications

References 25 publications

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

Structure and correlation effects in semiconductingSrTiO3

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