Bootstrapped full-swing BiCMOS/BiNMOS logic circuits for 1.2-3.3 V supply voltage regime

Bellaouar, A.; Elmasry, M.I.; Embabi, S.H.K.

doi:10.1109/4.387065

Cited by 21 publications

(15 citation statements)

References 13 publications

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“…HSpice [5] by using 0.35µm BiCMOS technology process. The comparison of the result is done by comparing the results from CMOS with the results from BFBiCMOS (Bootstrapped full-swing BiCMOS) based on the parameters of devices as shown in Table 1 [1].…”

Section: All Simulation Results Have Been Carried Out Based Onmentioning

confidence: 99%

“…Fig. 4 shows the simulation model of the proposed circuit by connecting 4 inverters in serial connection in order to compare with the CMOS and BFBiCMOS [1] as mentioned in Figs. 5 and 6, respectively.…”

Section: All Simulation Results Have Been Carried Out Based Onmentioning

confidence: 99%

“…The speed of the circuit is increased but the output of the signal cannot be full swing. Thus, the developments of BiCMOS circuits rapidly grow [1]. The BiCMOS technology developments at low supply voltage effect with the thin gate-oxide thickness including with the junctions of source and drain are shallow.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

AN ELECTROSTATIC DISCHARGE FREE BOOTSTRAPPED BiCMOS INVERTER CIRCUIT BASED ON PARASITIC DIODE

Tooprakai

Dejhan

2008

J CIRCUIT SYST COMP

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Electrostatic discharge (ESD) free bootstrapped BiCMOS inverter circuit is proposed. The proposed driver circuit uses the bootstrapped technique; the transistor base voltage is higher than the supply voltage. The input of circuit is arranged to protect the electrostatic discharge problem, and the output waveform is able to have full swing. The proposed circuit consumes low power with small delay time. The transistors in the circuit operate with high performance and efficiency.

show abstract

Section: All Simulation Results Have Been Carried Out Based Onmentioning

confidence: 99%

Section: All Simulation Results Have Been Carried Out Based Onmentioning

confidence: 99%

See 1 more Smart Citation

AN ELECTROSTATIC DISCHARGE FREE BOOTSTRAPPED BiCMOS INVERTER CIRCUIT BASED ON PARASITIC DIODE

Tooprakai

Dejhan

2008

J CIRCUIT SYST COMP

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show abstract

“…The chosen counterpart circuit of Fig. 1 is a fully CMOS re-implementation of BiCMOS driver scheme in [1] where NMOS transistors M8 and M9 are the replacement for the original NPN bipolar transistors.…”

Section: Introductionmentioning

confidence: 99%

“…

This paper reports a high speed and low power consumption direct-indirect bootstrapped full-swing CMOS inverter driver circuit (bfi-driver). The simulation results, based on 0.13µm triple well CMOS technology, show that, when operated at 1V , bfi-driver is 94% faster and consumes 22% less power compared to a counterpart direct bootstrap circuit [1].

…”

mentioning

confidence: 99%