Breakdown and Photoconductivity Enhancement by Mixed Reflective Al-Doped ZnO/Ag Electrode in Vertical SiC Photoconductive Switch

Wang, Langning; Zeng, Linglong; Fu-ying, Liu; Yi, Muyu; Yao, Jinmei; Xun, Tao; Yang, Hanwu; He, Juntao

doi:10.1109/led.2023.3263525

Cited by 8 publications

(3 citation statements)

References 28 publications

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“…10(c), under the experimental conditions of a repetition frequency of 100 Hz, a bias voltage of 8 kV, and an incident light energy of 8 mJ, compared with the unoptimized devices, the lifetimes of the PCSDs are increased by more than ten times. The output efficiencies are increased by about 20%, achieving an output of 100 A-level current conditions for more than 10 minutes [66] .…”

Section: Damage Mechanism Of Pcsdsmentioning

confidence: 99%

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Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Xun,

Niu,

Wang

et al. 2024

中国光学快报

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Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability. Over the past several years, benefitting from the sustainable innovations in laser technology and the significant progress in materials technology, megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices. Here, we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode, including the mechanism, system architecture, critical technology, and experimental demonstration of the proposed high-power photonic microwave sources. The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.

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Section: Damage Mechanism Of Pcsdsmentioning

confidence: 99%

“…10. (a) Breakdown process of the device, (b) optimized electrode structure with the double-sided AZO, and (c) effect of the optimized electrode structure on the lifetime and efficiency[66] .…”

mentioning

confidence: 99%

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Xun,

Niu,

Wang

et al. 2024

中国光学快报

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“…Wu et al [16] achieved 10.65 MW output power with 6H-SiC PCSS using a 2 MW peak optical power 1064 nm laser pulse. Wang et al [25] reported that a vertical SiC PCSS can continuously output 0.8 MW electrical pulses for 10 minutes with a 0.27 MW peak optical power 532 nm laser pulse. The main drawback of extrinsic SiC is its low light absorption, or in other words, photoelectric responsivity.…”

Section: Introductionmentioning

confidence: 99%

Fiber-Induced Optical Reflective Cavity in a High-Voltage SiC Photoconductive Switch to Improve Photoelectric Responsivity

Gu,

Yao,

Yue

et al. 2024

IEEE J. Electron Devices Soc.

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An optical reflective cavity in vertical extrinsic SiC photoconductive switches is developed to improve the light absorption or photoelectric responsivity with the fiber triggering. The optical reflective cavity consists of a total reflector, a center reflector, and a fiber to form a quasi-total internal light trap. The fiber with a core diameter of 400 μm is inserted into a hole reflector. Both simulations and experiments reveal that the light absorption of the device has been improved significantly. Compared with traditional vertical devices without optical configuration, the device demonstrates a 2.29× improvement in photoelectric responsivity. Using the optical reflective cavity, the SiC photoconductive switch achieves a power capacity of 3.1 MW with a peak photocurrent of 141 A at a laser energy of 15 mJ.

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A photo-controlled, all-solid, and frequency-tunable ultra-wideband pulse generator

Niu,

Wang,

Zeng

et al. 2023

Review of Scientific Instruments

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With the continuous exploration of the bioelectric effect, nanosecond and picosecond pulsed electric fields used in cancer therapy and drug introduction have attracted great attention. In this paper, an ultrashort pulsed electric field generator is proposed, which connects two photoconductive semiconductor switches in parallel to generate unipolar and bipolar pulses. We described the experimental scheme of the generator and the simulation of the radio frequency combiner. A 532 nm laser with pulse widths of 1 ns and 500 ps is used to trigger the photoconductive semiconductor switches. The experimental results show that the scheme can achieve adjustments of 357 and 720 MHz for the center frequency and the 3 dB bandwidth, respectively. The results confirm that this proposed scheme can be used for unipolar/bipolar frequency-adjustable ultra-wideband pulse generation.

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Breakdown and Photoconductivity Enhancement by Mixed Reflective Al-Doped ZnO/Ag Electrode in Vertical SiC Photoconductive Switch

Cited by 8 publications

References 28 publications

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Fiber-Induced Optical Reflective Cavity in a High-Voltage SiC Photoconductive Switch to Improve Photoelectric Responsivity

A photo-controlled, all-solid, and frequency-tunable ultra-wideband pulse generator

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