Broad area diode laser with on-chip transverse Bragg grating stabilized in an off-axis external cavity

Zink, Christof; Niebuhr, Mario; Jechow, Andreas; Heuer, Axel; Menzel, Ralf

doi:10.1364/oe.22.014108

Cited by 8 publications

(10 citation statements)

References 14 publications

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“…, taking into account the diffraction limited fast axis, increases by up to 44 % for the Bragg resonance. In comparison to the values reported in our previous work [13], which featured a dielectric mirror with a reflectivity of 15 %, the output powers turn out to be lower. This originates in the higher VBG and mirror reflectivity of 40 % in the current work.…”

Section: Vbg Mirrorcontrasting

confidence: 80%

“…The chip, designed and manufactured by the Ferdinand Braun Institute in Berlin, is the same one as in our previous work [13]. It comprises two unpumped 1D TBR gratings bilaterally positioned alongside a 91.5 µm wide and 1 mm long electrically pumped central emitter region.…”

Section: Methodsmentioning

confidence: 99%

“…We have recently shown that, when feedback is provided at this angle, the TBR mode can be stabilized with just a plane mirror [13]. With that setup near diffraction limited, narrow bandwidth emission with a single lobed far-field pattern was achieved.…”

Section: Introductionmentioning

confidence: 99%

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Mode stabilization of a laterally structured broad area diode laser using an external volume Bragg grating

et al. 2015

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An external volume Bragg grating (VBG) is used for transverse and longitudinal mode stabilization of a broad area diode laser (BAL) with an on-chip transverse Bragg resonance (TBR) grating. The internal TBR grating defines a transverse low-loss mode at a specific propagation angle inside the BAL. Selection of the TBR mode was realized via the angular geometry of an external resonator assembly consisting of the TBR BAL and a feedback element. A feedback mirror provides near diffraction limited and spectral narrow output in the TBR mode albeit requiring an intricate alignment procedure. If feedback is provided via a VBG, adjustment proves to be far less critical and higher output powers were achieved. Moreover, additional modulation in the far field distribution became discernible allowing for a better study of the TBR concept.

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Section: Vbg Mirrorcontrasting

confidence: 80%

Section: Methodsmentioning

confidence: 99%

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Mode stabilization of a laterally structured broad area diode laser using an external volume Bragg grating

et al. 2015

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“…Most strategies proposed seek to reduce the level of complexity by reducing the number of lasing modes. For broad-area semiconductor lasers, this can be achieved by external control, e.g., through injection of a coherent signal [15,16] or delayed optical feedback [17][18][19], or schemes based on Parity-Time symmetry [20,21]. Successful with moderate powers, these approaches quickly become less effective when increasing the cavity size in order to harness more power.…”

mentioning

confidence: 99%

Suppressing spatiotemporal lasing instabilities with wave-chaotic microcavities

Bittner

Guazzotti

Zeng

et al. 2018

Science

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Spatiotemporal instabilities are widespread phenomena resulting from complexity and nonlinearity. In broad-area edge-emitting semiconductor lasers, the nonlinear interactions of multiple spatial modes with the active medium can result in filamentation and spatiotemporal chaos. These instabilities degrade the laser performance and are extremely challenging to control. We demonstrate a powerful approach to suppress spatiotemporal instabilities using wave-chaotic or disordered cavities. The interference of many propagating waves with random phases in such cavities disrupts the formation of self-organized structures such as filaments, resulting in stable lasing dynamics. Our method provides a general and robust scheme to prevent the formation and growth of nonlinear instabilities for a large variety of high-power lasers.

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“…In most cases either the BAL facets or the lateral (effective) refractive index or pump current distributions are modified [1][2][3][4][5][6][7][8] (if so including transverse Bragg gratings [7,8]) or an external cavity is used [7][8][9][10][11][12][13][14] to achieve the desired transverse mode selection (TMS) (and if applicable also to stabilize a longitudinal mode [7,8]). In all these cases eventually spatial frequency filtering is performed.…”

Section: Introductionmentioning

confidence: 99%

Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

Fouckhardt

Kleinschmidt

Strassner

et al. 2017

Advances in OptoElectronics

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Previously we focused on fundamental transverse mode selection (TMS#0) of broad area semiconductor lasers (BALs) with two-arm folded integrated resonators for Fourier-optical spatial frequency filtering. The resonator had a round-trip length of 4f, where f is the focal length of the Fourier-transform element (FTE), that is, a cylindrical mirror in-between the orthogonal resonator branches. This 4f set-up can be called "retracted once" due to the reflective filter after 2f ; that is, the 2f path was used forwards and backwards. Now the branches are retracted once more resulting in a compact 1f long linear resonator (called "retracted twice") with a roundtrip length of 2f. One facet accommodates the filter, while the other houses the FTE, now incorporating a film-waveguide lens. The BAL facet with the filter represents both the Fourier-transform plane (after 2f, i.e., one round-trip) as well as the image plane (after 4f, two round-trips). Thus filtering is performed even after 4f, not just after 2f. Experimental results reveal good fundamental TMS for pump currents up to 20% above threshold and a one-dimensional beam quality parameter 2 1D = 1.47. The BALs are made from AlGaInAsSb, but the concept can equally well be employed for BALs of any material system.

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Broad area diode laser with on-chip transverse Bragg grating stabilized in an off-axis external cavity

Cited by 8 publications

References 14 publications

Mode stabilization of a laterally structured broad area diode laser using an external volume Bragg grating

Mode stabilization of a laterally structured broad area diode laser using an external volume Bragg grating

Suppressing spatiotemporal lasing instabilities with wave-chaotic microcavities

Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

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