Broadband electro-optic polymer modulators with high electro-optic activity and low poling induced optical loss

Chen, H.; Chen, B.; Huang, Diyun; Jin, Duo; Luo, Jingdong; Jen, Alex K.‐Y.; Dinu, Raluca

doi:10.1063/1.2965809

Cited by 52 publications

(32 citation statements)

References 16 publications

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“…A commercially available and reliable [23] electro-optic polymer is spin-coated. This material (named M3 by the supplier GigOptix Inc [24].) contains chromophores and is the very same material used in Telecordia certified polymer modulators of the same manufacturer.…”

Section: Structure Of the Silicon-organic Hybrid Iq Modulatormentioning

confidence: 99%

Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s

Korn¹,

Palmer²,

Yu³

et al. 2013

Opt. Express

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Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electrooptic effect by functionalizing a photonic integrated circuit with an organic χ (2) -nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.

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Section: Structure Of the Silicon-organic Hybrid Iq Modulatormentioning

confidence: 99%

Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s

Korn¹,

Palmer²,

Yu³

et al. 2013

Opt. Express

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“…This modulation bandwidth would be more than sufficient for a data rate of 100 Gbit/s. A 40 Gbit/s modulator was already reported [8].…”

Section: Introductionmentioning

confidence: 99%

100 Gbit/s electro-optic modulator and 56 Gbit/s wavelength converter for DQPSK data in silicon-organic hybrid (SOH) technology

Freude

Leuthold

Alloatti

et al. 2010

IEEE Photonics Society Summer Topicals 2010

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“…This value is about 15 times lower than the value reported in thin films of the same material. 15 We attribute this to an incomplete poling induced polar orientation of the guest chromophores in the 150 nm wide slot. 7 This important topic is currently under investigation as this deviation indicates that the performance of the device can be significantly improved by increasing the poling efficiency in the slot.…”

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confidence: 99%

“…Finally, the samples were covered by a polymer with strong second order NLO response consisting of a guest host system of EO-active chromophore AJ-CKL1 doped 25 wt % into amorphous polycarbonate ͑poly͓bisphenol-A-carbonate͔ x -co-͓4,4Ј-͑3,3,5-trimethylcyclohexylidene͒diphenol carbonate͔͒ ͑APC͒. 15 The polymer was deposited from solution ͑6 wt % in cyclopentanone͒ and subsequently baked at 80°C under vacuum for 12 h to remove residual solvent. The complete infiltration of the nanostructures with NLO-polymer is shown in the inset of Fig.…”

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confidence: 99%

Electro-optic modulation in slotted resonant photonic crystal heterostructures

Wülbern¹,

Hampe²,

Petrov³

et al. 2009

Applied Physics Letters

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Two dimensional photonic crystal waveguides in high index materials enable integrated optical devices with an extremely small geometrical footprint on the scale of micrometers. Slotted waveguides are based on the guiding of light in low refractive index materials and a field enhancement in this particular region of the device. In this letter we experimentally demonstrate electro-optic modulation in slotted photonic crystal waveguides based on silicon-on-insulator substrates covered and infiltrated with nonlinear optical polymers. A photonic crystal heterostructure is used to create a cavity, while simultaneously serving as an electrical connection from the slot to the metal electrodes that carry the modulation signal. © 2009 American Institute of Physics. ͓DOI: 10.1063/1.3156033͔Electrically driven optical modulation in silicon photonics typically relies on interactions between the optical mode and a free carrier plasma via either carrier depletion, injection, or accumulation. 1-3 The achievable modulation speed using these methods is limited by the time constants related to the injection or removal of carriers from the optical waveguide. In contrast, modulation via nonlinear optical ͑NLO͒ polymers accesses the electronic polarization of the organic molecules, which allows extremely high modulation speeds extending up to frequencies in the terahertz range. 4 Furthermore, molecular engineering of organic molecules has led to extremely high Pockels-coefficients in polymers exceeding 300 pm/V, 5 which is ten times the value available in lithiumniobate, the standard inorganic material used in electro-optic ͑EO͒ applications. Photonic devices based on a hybrid material system merging silicon and polymer are therefore attractive since they combine the strong light confining abilities of silicon with the superior NLO properties of polymers.All-optical and EO-modulation in such hybrid silicon and NLO-polymer systems has been demonstrated for slotted photonic wire based Mach-Zehnder and ring-resonator modulators. 6-8 Concepts based on slotted photonic crystal ͑PhC͒ waveguides can exploit slow light mechanisms or high quality factor cavities to achieve very compact device dimensions and have been discussed recently. 9-11 We propose a concept using a double heterostructure cavity 11-13 in a slotted silicon PhC waveguide, infiltrated with NLO-polymer to operate as an EO-modulator. Figure 1 shows a scanning electron micrograph of the structure. The 150 nm wide slot in the center of the waveguide is filled with NLO-polymer ͑n poly = 1.63͒ and the strong overlap between the optical field and the polymer makes the effective index of the propagating mode very sensitive to any refractive index changes in EOpolymer. The PhC features a background doping density of 10 15 cm −1 and therefore serves as an electrical conductor from the metallic contact pads to the slot, while keeping the optical field away from the metal regions and hence preventing additional losses. The double heterostructure design of the PhC ͑a = 410 nm, r / a = 0....

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Broadband electro-optic polymer modulators with high electro-optic activity and low poling induced optical loss

Cited by 52 publications

References 16 publications

Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s

Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s

100 Gbit/s electro-optic modulator and 56 Gbit/s wavelength converter for DQPSK data in silicon-organic hybrid (SOH) technology

Electro-optic modulation in slotted resonant photonic crystal heterostructures

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