Broadband high performance laterally diffused metal–oxide–semiconductor power amplifier for mobile two‐way radio applications

Kumar, Nagendra; Anand, L.

doi:10.1049/iet-cds.2014.0206

Cited by 5 publications

(1 citation statement)

References 25 publications

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“…Such attractive features usher in the possibility of high temperature and high power density operation when GaN HEMTs are utilized. On the other hand, LDMOS technology has recently undergone advanced modifications and enhancements that yield numerous advantages, and is a popular transistor choice for radio and broadcast applications [8], [14], [19], [20]. In this research, we employed a 25 W MRFE6VS25L LDMOS due to its low cost, high reliability, and acceptable gain flatness over 100 MHz-500 MHz.…”

Section: Choice Of Transistor and DC Bias Quiescent Pointmentioning

confidence: 99%

Systematic Approach for Design of Broadband, High Efficiency, High Power RF Amplifiers

Mohadeskasaei¹,

An²,

Chen³

et al. 2017

ETRI J

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This paper demonstrates a systematic approach for the design of broadband, high efficiency, high power, Class-AB RF amplifiers with high gain flatness. It is usually difficult to simultaneously achieve a high gain flatness and high efficiency in a broadband RF power amplifier, especially in a high power design. As a result, the use of a computer-aided simulation is most often the best way to achieve these goals; however, an appropriate initial value and a systematic approach are necessary for the simulation results to rapidly converge. These objectives can be accomplished with a minimum of trial and error through the following techniques. First, signal gain variations are reduced over a wide bandwidth using a proper pre-matching network. Then, the source and load impedances are satisfactorily obtained from small-signal and load-pull simulations, respectively. Finally, two highorder Chebyshev low-pass filters are employed to provide optimum input and output impedance matching networks over a bandwidth of 100 MHz-500 MHz. By using an EM simulation for the substrate, the simulation results were observed to be in close agreement with the measured results.Keywords: Broadband, Class-AB, Matching network, Power amplifier. Manuscript received June 28, 2016; revised Oct. 7, 2016; accepted Oct. 17, 2016. Seyed Alireza Mohadeskasaei (corresponding author, alireza.kasaee@gmail.com), Jianwei An (ajw626@126.com), Yueyun Chen (chenyy@ustb.edu.cn), Zhi Li (lizhi870218@gmail. com), Sani Umar Abdullahi (umarsani@gmail.com), and Tie Sun (suntie1605@163.com) are with the Department of Communication, School of Computer and Communication, University of Science and Technology Beijing, China. This is an Open Access article distributed under the term of Korea Open Government License (KOGL) Type 4: Source Indiction + Commercial Use Prohibition + Change Prohibition (http://www.kogl.or.kr/news/dataFileDown.do?dataIdx=71&dataFileIdx=2). I. IntroductionPower amplifiers (PAs) are one of the most significant ingredients of many communication systems. Four important requirements, namely, the efficiency, linearity, low noise, and broadband frequency response, must be considered when designing PAs [1]- [3]. For broadband power amplifiers, one of the most difficult challenges lies in determining how to achieve a high signal gain and high power level while maintaining a low power dissipation. In other words, how to achieve high efficiency. At the same time, gain variation throughout the band causes more challenges for modern signal modulation techniques, such as quadrature amplitude modulation.In wideband applications, linear classes, such as Class-A, Class-B, and Class-AB, are widely employed because they provide appropriate bandwidths and acceptable signal gains [4]- [5], but their efficiency is not as high as that of harmonictuned classes, such as Class-E and Class-F [6]- [7]. Various aspects resulting from recent research on broadband PAs are summarized in Table 1. According to this table, a Class-F PA exhibits a high power-added efficiency (P...

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Section: Choice Of Transistor and DC Bias Quiescent Pointmentioning

confidence: 99%

Systematic Approach for Design of Broadband, High Efficiency, High Power RF Amplifiers

Mohadeskasaei¹,

An²,

Chen³

et al. 2017

ETRI J

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show abstract

High‐power multi‐octave laterally diffused metal–oxide–semiconductor power amplifier with resistive harmonic termination

Ahmadi

2019

IET Circuits, Devices & Systems

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In this study, a broadband high-power amplifier with resistive harmonic matching is introduced. The analytical formulations for the drain voltage, output power, optimum load resistance, and efficiency are derived for this type of amplifier under class-B bias conditions. The design is based on a linear model of a laterally diffused metal-oxide-semiconductor transistor. In contrast to the conventional linear method that is based on an equivalent output circuit, the output matching circuit is designed in the presence of the dependent current source and intrinsic elements of the transistor. The design technique permits a broadband amplifier to be realised without load-pull measurement. The broadband power amplifier is intended for operation in the frequency range of 30-1000 MHz and covers the very high-frequency (HF) and ultra-HF bands. The power amplifier delivers 100 W to a 50 Ω load with efficiencies of 38-56%. To validate the design concept, the measured performance of the power amplifier is compared with simulations that incorporate a non-linear model of the transistor. The power amplifier is not driven into saturation and exhibits 2nd and 3rd harmonics of <−20 and <−10 dBc, respectively.

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A Compact Size, Multi Octave Bandwidth Power Amplifier, Using LDMOS Transistors

Momenzadeh

Ahmadi

2018

Electrical Engineering (ICEE), Iranian Conference On

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Broadband high performance laterally diffused metal–oxide–semiconductor power amplifier for mobile two‐way radio applications

Cited by 5 publications

References 25 publications

Systematic Approach for Design of Broadband, High Efficiency, High Power RF Amplifiers

Systematic Approach for Design of Broadband, High Efficiency, High Power RF Amplifiers

High‐power multi‐octave laterally diffused metal–oxide–semiconductor power amplifier with resistive harmonic termination

A Compact Size, Multi Octave Bandwidth Power Amplifier, Using LDMOS Transistors

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