1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers 1983
DOI: 10.1109/isscc.1983.1156509
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Building block approach and variable size memory for CMOS VLSIs

Abstract: Right) FIGURE 1-The hierarchical structure of the chip.CMOS BUILDING block VLSIs with integration ranging from 10k to 20k gates, will be reported. Required layout design time was comparable to that of conventional gate arrays. The design used 2 p CMOS technology and an automated building block approach.

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