Building blocks for digital wireless communications in sub-micron technologies: an overview

Finol, J.L.; Durec, J.; Lovelace, D.

doi:10.1109/iccdcs.1998.705818

Cited by 3 publications

(1 citation statement)

References 26 publications

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“…We will now deal with the question if this performance is sufficient for the high-frequency circuitry of SoCs. A frequently used (and rather conservative) rule of thumb for high-frequency small-signal transistors is that the f T of a transistor should be ten times the operating frequency of the system in which the transistor is to be used, and that f max should be at least equal to f T (4,17). For high-frequency power transistors, the requirements are a bit more relaxed.…”

Section: Sige Hbtsmentioning

confidence: 99%

High-Frequency Device Options for Systems-on-Chip

Schwierz

2007

ECS Trans.

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In this paper, the state-of-the-art of high-frequency transistors and their prospects for application in the high-frequency parts of systems-on-chip is reviewed. It is shown that Si-based high-frequency transistors, in particular Si MOSFETs, offer very competitive performance and fulfill most of the requirements of current system-on-chip solutions. Although today III-V HEMTs and HBTs show the best performance in terms of cutoff frequency and maximum frequency of oscillation, their widespread application in systems-on-chip is rather unlikely in the medium term. The prospects of other high-frequency device concepts, such as III-V MOSFETs and carbon-based transistors, are also discussed.

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Section: Sige Hbtsmentioning

confidence: 99%